Datasheet > 存储 > DRAM> HSD32M64F8V-F10

HSD32M64F8V-F10

更新时间： 2024-01-21 06:35:44

品牌	Logo	应用领域
HANBIT		存储动态存储器
页数	文件大小	规格书
11页	89K
描述
Synchronous DRAM Module, 256Mbyte ( 32M x 64-Bit ) SMM based on 32Mx8, 4Banks, 8K Ref., 3.3V

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技术参数
数据手册

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HSD32M64F8V-F10 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.75
Is Samacsys：	N	Base Number Matches：	1

HSD32M64F8V-F10 数据手册

HANBit

HSD32M64F8V/VA

ORDERING INFORMATION

Part Number

Density

Org.

Package

Ref.

Vcc

Feature

MAX.frq

120 Pin

SMM

133MHz

(CL=3)

HSD32M64F8V-13

HSD32M64F8V-F13

HSD32M64F8V-12

HSD32M64F8V-F12

HSD32M64F8V-10

HSD32M64F8V-F10

HSD32M64F8VA-13

HSD32M64F8VA-F13

HSD32M64F8VA-12

HSD32M64F8VA-F12

HSD32M64F8VA-10

HSD32M64F8VA-F10

256MByte

256Mbyte

256MByte

256Mbyte

32Mx 64

3.3V

120 Pin

SMM

Low

133MHz

(CL=3)

Power

120 Pin

SMM

125MHz

(CL=3)

120 Pin

SMM

Low

125MHz

(CL=3)

Power

120 Pin

SMM

100MHz

(CL=2)

120 Pin

SMM

Low

100MHz

(CL=2)

Power

120 Pin

SMM

133MHz

(CL=3)

120 Pin

SMM

Low

133MHz

(CL=3)

Power

120 Pin

SMM

125MHz

(CL=3)

120 Pin

SMM

Low

125MHz

(CL=3)

Power

120 Pin

SMM

100MHz

(CL=2)

120 Pin

SMM

Low

100MHz

(CL=2)

Power

* F means Auto & Self refresh with Low-Power (3.3V)

* HSD32M64F8V

* HSD32M64F8VA

T = 11.3mm

T = 7.3mm

URL:www.hbe.co.kr

REV.1.0 (August.2002)

HANBit Electronics Co.,Ltd.

1...8 9 1011

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