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HSD32M72D18P-13

更新时间： 2024-01-05 00:52:20

品牌	Logo	应用领域
HANBIT		存储动态存储器
页数	文件大小	规格书
11页	179K
描述
Synchronous DRAM Module 256Mbyte (32Mx72bit), DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V

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技术参数
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HSD32M72D18P-13 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.75
Is Samacsys：	N	Base Number Matches：	1

HSD32M72D18P-13 数据手册

HANBit

HSD32M72D18P

Synchronous DRAM Module 256Mbyte (32Mx72bit), DIMM with ECC based on

16Mx8, 4Banks, 4K Ref., 3.3V

Part No. HSD32M72D18P (Unbuffered)

GENERAL DESCRIPTION

The HSD32M72D18P is a 32M x 72 bit Synchronous Dynamic RAM high-density memory module. The module consists

of eighteen CMOS 16M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages and 2K EEPROM in 8-pin

TSSOP package on a 168-pin glass-epoxy. Two 0.33uF-decoupling capacitors are mounted on the printed circuit board in

parallel for each SDRAM. The HSD32M72D18P is a DIMM (Dual in line Memory Module) and is intended for mounting into

168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O

transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same

device to be useful for a variety of high bandwidth, high performance memory system applications All module components

may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.

FEATURES

• Part Identification

HSD32M72D18P-F/10L : 100MHz (CL=3)

HSD32M72D18P-F/10 : 100MHz (CL=2)

HSD32M72D18P-F/12 : 125MHz (CL=3)

HSD32M72D18P-F/13 : 133MHz (CL=3)

F means Auto & Self refresh with Low-Power (3.3V)

• Burst mode operation

• Auto & self refresh capability (4096 Cycles/64ms)

• LVTTL compatible inputs and outputs

• Single 3.3V ±0.3V power supply

• MRS cycle with address key programs

- Latency (Access from column address)

- Burst length (1, 2, 4, 8 & Full page)

- Data scramble (Sequential & Interleave)

• All inputs are sampled at the positive going edge of the system clock

• The used device is 8M x 8bit , 4Banks SDRAM

URL: www.hbe.co.kr

HANBit Electronics Co.,Ltd.

REV.1.0 (Augsut.2002)

- 1 -

12 3 4 5 6 7...11

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HSD32M72D18P-F10	HANBIT	Synchronous DRAM Module 256Mbyte (32Mx72bit), DIMM with ECC based on 16Mx8, 4Banks, 4K Ref	获取价格
HSD32M72D18P-F10L	HANBIT	Synchronous DRAM Module 256Mbyte (32Mx72bit), DIMM with ECC based on 16Mx8, 4Banks, 4K Ref	获取价格
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HSD32M72D18R	HANBIT	Synchronous DRAM Module 256Mbyte (32Mx72bit), DIMM with ECC based on 16Mx8, 4Banks, 4K Ref	获取价格
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