Datasheet > HSD32M72D18A-10

HSD32M72D18A-10

更新时间： 2024-02-01 04:26:35

品牌	Logo	应用领域
HANBIT		动态存储器
页数	文件大小	规格书
10页	178K
描述
Synchronous DRAM Module 256Mbyte (32Mx72bit), DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

HSD32M72D18A-10 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.75
Base Number Matches：	1

HSD32M72D18A-10 数据手册

HANBit

HSD32M72D18A

Synchronous DRAM Module 256Mbyte (32Mx72bit), DIMM with ECC based on

16Mx8, 4Banks, 4K Ref., 3.3V

Part No. HSD32M72D18A (Unbuffered)

GENERAL DESCRIPTION

The HSD32M72D18A is a 32M x 72 bit Synchronous Dynamic RAM high-density memory module. The module consists

of eighteen CMOS 16M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages and 2K EEPROM in 8-pin

TSSOP package on a 168-pin glass-epoxy. Two 0.33uF-decoupling capacitors are mounted on the printed circuit board in

parallel for each SDRAM. The HSD32M72D18A is a DIMM (Dual in line Memory Module) and is intended for mounting into

168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O

transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same

device to be useful for a variety of high bandwidth, high performance memory system applications All module components

may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.

FEATURES

• Part Identification

HSD32M72D18A-F/10L : 100MHz (CL=3)

HSD32M72D18A-F/10 : 100MHz (CL=2)

HSD32M72D18A-F/12 : 125MHz (CL=3)

HSD32M72D18A-F/13 : 133MHz (CL=3)

F means Auto & Self refresh with Low-Power (3.3V)

• Burst mode operation

• Auto & self refresh capability (4096 Cycles/64ms)

• LVTTL compatible inputs and outputs

• Single 3.3V ±0.3V power supply

• MRS cycle with address key programs

- Latency (Access from column address)

- Burst length (1, 2, 4, 8 & Full page)

- Data scramble (Sequential & Interleave)

• All inputs are sampled at the positive going edge of the system clock

• The used device is 8M x 8bit , 4Banks SDRAM

URL: www.hbe.co.kr

REV.1.0 (August.2002)

HANBit Electronics Co.,Ltd.

- 1 -

12 3 4 5 6 7...10

下载PDF

与HSD32M72D18A-10相关器件

型号	品牌	描述	获取价格	数据表
HSD32M72D18A-10L	HANBIT	Synchronous DRAM Module 256Mbyte (32Mx72bit), DIMM with ECC based on 16Mx8, 4Banks, 4K Ref	获取价格
HSD32M72D18A-12	HANBIT	Synchronous DRAM Module 256Mbyte (32Mx72bit), DIMM with ECC based on 16Mx8, 4Banks, 4K Ref	获取价格
HSD32M72D18A-13	HANBIT	Synchronous DRAM Module 256Mbyte (32Mx72bit), DIMM with ECC based on 16Mx8, 4Banks, 4K Ref	获取价格
HSD32M72D18A-F10	HANBIT	Synchronous DRAM Module 256Mbyte (32Mx72bit), DIMM with ECC based on 16Mx8, 4Banks, 4K Ref	获取价格
HSD32M72D18A-F10L	HANBIT	Synchronous DRAM Module 256Mbyte (32Mx72bit), DIMM with ECC based on 16Mx8, 4Banks, 4K Ref	获取价格
HSD32M72D18A-F12	HANBIT	Synchronous DRAM Module 256Mbyte (32Mx72bit), DIMM with ECC based on 16Mx8, 4Banks, 4K Ref	获取价格