Datasheet > HSCH-5300SERIES

HSCH-5300SERIES

更新时间： 2024-11-20 23:56:39

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其他 - ETC		肖特基二极管光电二极管
页数	文件大小	规格书
6页	128K
描述
Beam Lead Schottky Diodes for Mixers and Detectors (1?26 GHz) (128K in pdf)

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HSCH-5300SERIES 数据手册

Beam Lead Schottky Diodes for

Mixers and Detectors

(1– 26 GHz)

Technical Data

HSCH-5300 Series

Features

Outline 07

• Platinum Tri-Metal System

High Temperature Stability

• Silicon Nitride Passivation

CATHODE

GOLD LEADS

130 (5)

100 (4)

Stable, Reliable Performance

135 (5)

90 (3)

• Low Noise Figure

Guaranteed 7.5 dB at 26 GHz

135 (5)

90 (3)

• High Uniformity

Tightly Controlled Process

Insures Uniform RF

Characteristics

225 (9)

200 (8)

310 (12)

250 (10)

225 (9)

170 (7)

• Rugged Construction

4 Grams Minimum Lead Pull

• Low Capacitance

12 (.5)

8 (.3)

30 MIN (1)

0.10 pF Max. at 0 V

• Polyimide Scratch Protection

SILICON

GLASS

710 (28)

670 (26)

60 (2)

40 (1)

Description

These beam lead diodes are

constructed using a metal-

semiconductor Schottky barrier

junction. Advanced epitaxial

techniques and precise process

control insure uniformity and

repeatability of this planar

passivated microwave semicon-

ductor. A nitride passivation layer

provides immunity from

DIMENSIONS IN µm (1/1000 inch)

Maximum Ratings

Pulse Power Incident at T_A= 25°C ................................................... 1W

PulseWidth=1µs,Du=0.001

CW Power Dissipation at T_A= 25°C........................................... 150mW

Measuredinaninfiniteheatsinkderatedlinearly

tozeroatmaximumratedtemperature

contaminants which could

otherwise lead to I_Rdrift.

T_OPR– Operating Temperature Range........................... -65°Cto+175°C

T_STG– Storage Temperature Range ............................... -65°Cto+200°C

Minimum Lead Strength ................................... 4 grams pull on any lead

Diode Mounting Temperature ........................... +350°Cfor10sec.max.

The HP beam lead process allows

for large beam anchor pads for

rugged construction (typical

6 grampullstrength)without

degrading capacitance.

These diodes are ESD sensitive. Handle with care to avoid static

discharge through the diode.

5965-8849E

3-64

12 3 4 5 6

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与HSCH-5300SERIES相关器件

型号	品牌	获取价格	描述	数据表
HSCH-5310	AGILENT	获取价格	Beam Lead Schottky Diodes for Mixers and Detectors (1 - 26 GHz)
HSCH-5311	AVAGO	获取价格	SILICON, MEDIUM BARRIER SCHOTTKY, L-K BAND, MIXER DIODE
HSCH-5312	AGILENT	获取价格	Beam Lead Schottky Diodes for Mixers and Detectors (1 - 26 GHz)
HSCH-5313	AVAGO	获取价格	Mixer Diode, Medium Barrier, L Band to K Band, Silicon
HSCH-5314	AGILENT	获取价格	Beam Lead Schottky Diodes for Mixers and Detectors (1 - 26 GHz)
HSCH5315	ASI	获取价格	Mixer Diode, Medium Barrier, X Band, 7.2dB Noise Figure, Silicon, BL1, 2 PIN
HSCH-5315	AGILENT	获取价格	Beam Lead Schottky Diodes for Mixers and Detectors (1 - 26 GHz)
HSCH-5315	ASI	获取价格	BATCH MATCHED BEAM LEAD SCHOTTKY DIODE
HSCH-5316	AGILENT	获取价格	Beam Lead Schottky Diodes for Mixers and Detectors (1 - 26 GHz)
HSCH-5317	AGILENT	获取价格	Beam Lead Schottky Diodes for Mixers and Detectors (1 - 26 GHz)