Datasheet > HS8N60

HS8N60

更新时间： 2024-09-16 12:19:47

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描述
N-CHANNEL POWER MOSFET

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HS8N60 数据手册

HS8N60

N-CHANNEL POWER MOSFET

DESCRIPTION

This MOSFET is produced with advanced VDMOS technology of This technology

enable power MOSFET to have better characteristics , such as fast switching time , low on

resistance, low gate charge and especially excellent avalanche characteristics . This power

MOSFET is usually used at high efficient DC to DC converter block and SMPS. It’s typical

application is TV and monitor.

SCHEMATIC SYMBOL

FEATURES

• High ruggedness

• R^DS(ON)(Max. 1.3Ω)@V^GS=10V

• Gate Charge (Typ.38nC)

• Improved dv/dt Capability

• 100% Avalanche Tested

TO-220AB

TO-220F

PACKAGE

TO-220AB

TO-220F

600

7.5

5.1

4.1

230

14.7

4.5

147

1.18

0.43

300

TO-220AB

0.85

TO-220F

2.35

62.5

www.protekdevices.com

05081.R11 2/11

Page 1

lizhenhui MB:+86-13537087568 E-mail:dgjifu@qq.com

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