Datasheet > HS3AB

HS3AB

更新时间： 2024-12-01 03:42:47

品牌	Logo	应用领域
TSC		二极管光电二极管功效
页数	文件大小	规格书
2页	191K
描述
3.0 AMPS. High Efficient Surface Mount Rectifiers

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中文翻译

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数据手册

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HS3AB 数据手册

HS3AB - HS3MB

3.0 AMPS. High Efficient Surface Mount Rectifiers

SMB/DO-214AA

.083(2.10)

.077(1.95)

.147(3.73)

.137(3.48)

Features

ꢀ

Glass passivated junction chip.

.187(4.75)

.167(4.25)

.012(.31)

.006(.15)

For surface mounted application

Low forward voltage drop

Low profile package

Built-in stain relief, ideal for automatic

placement

.103(2.61)

.078(1.99)

.012(.31)

.006(.15)

ꢀ

Fast switching for high efficiency

High temperature soldering:

.056(1.41)

.035(0.90)

.008(.20)

.004(.10)

260 C/10 seconds at terminals

.209(5.30)

.201(5.10)

ꢀ

Plastic material used carries Underwriters

Laboratory Classification 94V0

Mechanical Data

Dimensions in inches and (millimeters)

ꢀ

Cases: Molded plastic

Terminals: Pure tin plated, lead free

Polarity: Indicated by cathode band

Packing: 16mm tape per EIA STD RS-481

Weight: 0.21 gram

Maximum Ratings and Electrical Characteristics

Rating at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

HS HS

Symbol

Type Number

Units

3AB 3BB 3DB 3FB 3GB 3JB 3KB 3MB

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RRM50 100 200 300 400 600 800 1000

V_RMS35 70 140 210 280 420 560 700

V_DC50 100 200 300 400 600 800 1000

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

See Fig. 1

3.0

I_(AV)

Peak Forward Surge Current, 8.3 ms Single

Half Sine-wave Superimposed on Rated

Load (JEDEC method )

150

I_FSM

Maximum Instantaneous Forward Voltage

@ 3.0A

1.0

1.3

1.7

V_F

Maximum DC Reverse Current @ T_A=25 C

I_R

at Rated DC Blocking Voltage @ T_A=125 C

250

Maximum Reverse Recovery Time ( Note 1 )

Typical Junction Capacitance ( Note 2 )

Operating Temperature Range

Trr

T_J

-55 to +150

Storage Temperature Range

TSTG

1. Reverse Recovery Test Conditions: I^F=0.5A, IR=1.0A, IRR=0.25A

2. Measured at 1 MHz and Applied V^R=4.0 Volts.

Notes:

3. Measured on P.C.Board with 0.6” x 0.6” (16mm x 16mm) Copper Pad Area.

Version: A06

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