Datasheet > HS3DB

HS3DB

更新时间： 2024-12-01 12:57:03

品牌	Logo	应用领域
森美特 - SUNMATE		二极管光电二极管功效
页数	文件大小	规格书
2页	444K
描述
3A patch fast recovery diode 200V SMB series

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中文翻译

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数据手册

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HS3DB 数据手册

HS3AB - HS3MB

SURFACE MOUNT HIGH EFFICIENCY RECTIFIER DIODES

VOLTAGE RANGE: 50 - 1000V

CURRENT: 3.0 A

Features

Low cost

Diffused junction

Ultra fast switching for highefficiency

Low reverse leakage current

Low forward voltage drop

SMB(DO-214AA)

Highcurrent capability

Dim

Min

3.30

4.06

1.91

0.15

5.00

0.10

0.76

2.00

Max

3.94

4.70

2.21

0.31

5.59

0.20

1.52

2.62

The plastic material carries UL recognition94V-0

Mechanical Data

Case: SMB/DO-214AA, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.093 grams (approx.)

All Dimensions in mm

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

SYMBOL HS3AB HS3BB HS3DB HS3GB HS3JB HS3KB HS3MB

UNIT

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC Blocking Voltage

100

1000

Maximum Average Forward

I(AV)

3.0

Rectified Current

@TA =55 ℃

Peak Forward Surage Current

8.3ms Single Half Sine-Wave

IFSM

150

Super Imposed on Rated Load(JEDEC Method)

Peak Forward Voltage at 3.0A DC(Note1)

1.0

1.7

1.3

5.0

Maximum DC Reverse Current

at Rated DC Blocking Voltage

@TJ=25℃

100

@TJ=100℃

Maximum Reverse Recovery Time(Note 1)

Typical Junction Capacitance (Note2)

Typical Thermal Resistance (Note3)

Operating Temperature Range

TRR

R JA

℃/W

℃

-50 to +150

Storage Temperature Range

TSTG

℃

NOTES: 1.Measured with IF=0.5A，IR=1A ，IRR=0.25A

2.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC

3.Thermal resistance junction to ambient

1 of 2

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