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HS3GB PDF预览

HS3GB

更新时间: 2024-12-01 03:42:47
品牌 Logo 应用领域
TSC 二极管光电二极管功效
页数 文件大小 规格书
2页 191K
描述
3.0 AMPS. High Efficient Surface Mount Rectifiers

HS3GB 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:GREEN, PLASTIC, SMB, 2 PINReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.04应用:EFFICIENCY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
最大非重复峰值正向电流:100 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大重复峰值反向电压:400 V
最大反向恢复时间:0.05 µs表面贴装:YES
端子面层:Tin (Sn)端子形式:C BEND
端子位置:DUALBase Number Matches:1

HS3GB 数据手册

 浏览型号HS3GB的Datasheet PDF文件第2页 
HS3AB - HS3MB  
3.0 AMPS. High Efficient Surface Mount Rectifiers  
SMB/DO-214AA  
.083(2.10)  
.077(1.95)  
.147(3.73)  
.137(3.48)  
Features  
Glass passivated junction chip.  
.187(4.75)  
.167(4.25)  
.012(.31)  
.006(.15)  
For surface mounted application  
Low forward voltage drop  
Low profile package  
Built-in stain relief, ideal for automatic  
placement  
.103(2.61)  
.078(1.99)  
.012(.31)  
.006(.15)  
Fast switching for high efficiency  
High temperature soldering:  
o
.056(1.41)  
.035(0.90)  
.008(.20)  
.004(.10)  
260 C/10 seconds at terminals  
.209(5.30)  
.201(5.10)  
Plastic material used carries Underwriters  
Laboratory Classification 94V0  
Mechanical Data  
Dimensions in inches and (millimeters)  
Cases: Molded plastic  
Terminals: Pure tin plated, lead free  
Polarity: Indicated by cathode band  
Packing: 16mm tape per EIA STD RS-481  
Weight: 0.21 gram  
Maximum Ratings and Electrical Characteristics  
o
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
HS HS  
HS  
HS  
HS  
HS  
HS  
HS  
Symbol  
Type Number  
Units  
3AB 3BB 3DB 3FB 3GB 3JB 3KB 3MB  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM 50 100 200 300 400 600 800 1000  
VRMS 35 70 140 210 280 420 560 700  
VDC 50 100 200 300 400 600 800 1000  
V
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
See Fig. 1  
3.0  
A
A
V
I(AV)  
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated  
Load (JEDEC method )  
150  
IFSM  
Maximum Instantaneous Forward Voltage  
@ 3.0A  
1.0  
1.3  
10  
1.7  
VF  
o
uA  
uA  
Maximum DC Reverse Current @ TA =25 C  
o
IR  
at Rated DC Blocking Voltage @ TA=125 C  
250  
Maximum Reverse Recovery Time ( Note 1 )  
Typical Junction Capacitance ( Note 2 )  
Operating Temperature Range  
Trr  
Cj  
50  
80  
75  
50  
nS  
pF  
o
TJ  
-55 to +150  
-55 to +150  
C
o
Storage Temperature Range  
TSTG  
C
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1 MHz and Applied VR=4.0 Volts.  
Notes:  
3. Measured on P.C.Board with 0.6” x 0.6” (16mm x 16mm) Copper Pad Area.  
Version: A06  

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