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HS3F

更新时间: 2024-12-01 03:42:47
品牌 Logo 应用领域
固锝 - GOOD-ARK 整流二极管光电二极管功效
页数 文件大小 规格书
2页 189K
描述
High Efficient Surface Mount Rectifiers Reverse Voltage 50 to 1000 Volts Forward Current 3.0 Amperes

HS3F 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-C2Reach Compliance Code:compliant
风险等级:5.45Is Samacsys:N
应用:EFFICIENCY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJEDEC-95代码:DO-214AB
JESD-30 代码:R-PDSO-C2最大非重复峰值正向电流:150 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大重复峰值反向电压:300 V
最大反向电流:10 µA最大反向恢复时间:0.05 µs
子类别:Rectifier Diodes表面贴装:YES
端子形式:C BEND端子位置:DUAL
Base Number Matches:1

HS3F 数据手册

 浏览型号HS3F的Datasheet PDF文件第2页 
HS3A thru HS3M  
High Efficient Surface Mount Rectifiers  
Reverse Voltage 50 to 1000 Volts Forward Current 3.0 Amperes  
Features  
‹ Glass passivated junction chip.  
‹ For surface mounted application  
‹ Low forward voltage drop  
‹ Low profile package  
‹ Built-in stain relief, ideal for automatic placement  
‹ Fast switching for high efficiency  
‹ High temperature soldering:  
250oC/10 seconds at terminals  
‹ Plastic material used carries Underwriters Laboratory  
Classification 94V-O  
Mechanical Data  
‹ Cases: Molded plastic  
‹ Terminals: Solder plated  
‹ Polarity: Indicated by cathode band  
‹ Weight: 0.009 ounce, 0.21 gram  
Maximum Ratings and Electrical Characteristics  
Ratings at 25oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Parameter  
Symbols  
HS3A  
HS3B  
HS3D  
HS3F  
HS3G  
HS3J  
HS3K  
HS3M  
Units  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
300  
210  
300  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Volts  
Volts  
Volts  
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current  
See Fig.2  
I
3.0  
Amps  
(AV)  
Peak forward surge current, 8.3ms single  
half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
150.0  
Amps  
Volts  
Maximum instantaneous forward voltage @ 3.0A  
VF  
IR  
1.0  
1.3  
1.7  
Maximum DC reverse current  
at rated DC blocking voltage  
@ TA=25oC  
10.0  
200  
uA  
uA  
@ TA=100oC  
nS  
pF  
oC  
oC  
Maximum reverse recovery time (Note 1)  
Typical junction capacitance (Note 2)  
Operating junction temperature range  
Storage temperature range  
trr  
CJ  
50  
80  
75  
50  
TJ  
-55 to +150  
-55 to +150  
TSTG  
Notes:  
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.  
181  

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