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HRF-SW1021-TR PDF预览

HRF-SW1021-TR

更新时间: 2024-11-19 19:53:23
品牌 Logo 应用领域
霍尼韦尔 - HONEYWELL PC射频微波
页数 文件大小 规格书
6页 153K
描述
SP4T, 0MHz Min, 2500MHz Max, 1 Func, 3.5dB Insertion Loss-Max, CMOS, 4 X 4 MM, ULTRA SMALL, VQFN, LPCC-20

HRF-SW1021-TR 技术参数

生命周期:Active包装说明:LCC20,.16SQ,20
Reach Compliance Code:unknown风险等级:5.74
1dB压缩点:19 dBm其他特性:CMOS COMPATIBLE
特性阻抗:75 Ω构造:COMPONENT
最大输入功率 (CW):35.05 dBm最大插入损耗:3.5 dB
安装特点:SURFACE MOUNT功能数量:1
端子数量:20准时:0.02 µs
最大工作频率:2500 MHz最小工作频率:
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:LCC20,.16SQ,20
端口终止:ABSORPTIVE电源:5 V
射频/微波设备类型:SP4T子类别:RF/Microwave Switches
表面贴装:YES技术:CMOS
最大电压驻波比:1.8Base Number Matches:1

HRF-SW1021-TR 数据手册

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HRF-SW1021  
Preliminary  
SP4T Absorptive RF Switch  
Features  
xꢀ High Isolation Of > 40 dB @ 2 GHz  
xꢀ Low Insertion Loss Of 1.45dB @ 2 GHz  
xꢀ DC To 2.5 GHz Operating Frequency  
xꢀ Integrated CMOS Control Logic  
xꢀ Integrated ESD Protection on Digital I/O  
xꢀ Single Positive Supply Voltage  
xꢀ Ultra Small LPCCTM Packaging  
xꢀ Impedance matched to 75 Ohm systems  
Product Description  
HRF-SW1021 in LPCC™ Package  
The Honeywell HRF-SW1021 is a high performance  
single pole four throw (SP4T) absorptive RF switch that  
is ideal for use in wireless basestation and handset  
applications that require minimum power and minimum  
insertion loss.  
The HRF-SW1021 is manufactured with Honeywell's  
patented Silicon On Insulator (SOI) CMOS technology,  
which provides the performance of GaAs with the  
economy and integration capabilities of conventional  
CMOS technology.  
RF Electrical Specifications @ + 25oC  
Results @ Vdd=5.0 +/- 10%, Vss = 0 unless otherwise stated, Z0= 75 ohms  
Parameter  
Test Condition  
Frequency  
DC – 1.0 GHz  
2.0 GHz  
Minimum  
Typical  
1.35  
Maximum  
Units  
dB  
Insertion Loss  
1.7  
2.1  
2.9  
1.45  
dB  
2.5 GHz  
2.60  
dB  
Isolation  
DC – 1.0 GHz  
2.0 GHz  
53.5  
dB  
43.0  
dB  
2.5 GHz  
40.0  
dB  
VSWR*  
DC – 0.5 GHz  
0.5 – 1.5 GHz  
1.5 – 2.5 GHz  
1.1:1  
1.2:1  
1.6:1  
Ratio  
Ratio  
Ratio  
1.8:1  
1dB Compression  
Input Power  
Vss = Gnd  
1.0 GHz  
1.0 GHz  
19  
28  
dBm  
dBm  
Vss = -3  
Input IP3  
Two-Tone Inputs Up To + 5 dBm  
Vss = Gnd  
2.0 GHz  
2.0 GHz  
31  
32  
10  
20  
10  
dBm  
dBm  
nS  
Vss = -3  
Trise, Tfall*  
Ton, Toff  
10% To 90%  
50% Cntl To 90%/10%Rf  
In-Band  
nS  
Transients  
*By design  
mV  
________________________________________________________________________________________________________  
Web Site:  
Email:  
www.mysoiservices.com  
Honeywell  
Solid State Electronics Center  
12001 State Highway 55  
mysoiservices@honeywell.com  
2002 1021W  
Published November 2002 Page 1  
Plymouth, Minnesota 55441-4799  
1-800-323-8295  

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