5秒后页面跳转
HRF-SW1030-TR PDF预览

HRF-SW1030-TR

更新时间: 2024-11-02 19:46:31
品牌 Logo 应用领域
霍尼韦尔 - HONEYWELL PC射频微波
页数 文件大小 规格书
6页 194K
描述
SP6T, 0MHz Min, 2500MHz Max, 1 Func, 3.8dB Insertion Loss-Max, CMOS, 4 X 4 MM, ULTRA SMALL, VQFN, LPCC-24

HRF-SW1030-TR 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LCC24,.16SQ,20Reach Compliance Code:unknown
风险等级:5.311dB压缩点:19 dBm
其他特性:CMOS COMPATIBLE特性阻抗:50 Ω
构造:COMPONENT最大输入功率 (CW):35.05 dBm
最大插入损耗:3.8 dBJESD-609代码:e4
安装特点:SURFACE MOUNT功能数量:1
端子数量:24准时:0.02 µs
最大工作频率:2500 MHz最小工作频率:
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:LCC24,.16SQ,20
端口终止:ABSORPTIVE电源:5 V
射频/微波设备类型:SP6T子类别:RF/Microwave Switches
表面贴装:YES技术:CMOS
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)最大电压驻波比:1.8
Base Number Matches:1

HRF-SW1030-TR 数据手册

 浏览型号HRF-SW1030-TR的Datasheet PDF文件第2页浏览型号HRF-SW1030-TR的Datasheet PDF文件第3页浏览型号HRF-SW1030-TR的Datasheet PDF文件第4页浏览型号HRF-SW1030-TR的Datasheet PDF文件第5页浏览型号HRF-SW1030-TR的Datasheet PDF文件第6页 
HRF-SW1030  
Preliminary  
SP6T Absorptive RF Switch  
Features  
xꢀ High Isolation Of > 40 dB @ 2 GHz  
xꢀ Low Insertion Loss Of 1.9 dB @ 2 GHz  
xꢀ DC To 2.5 GHz Operating Frequency  
xꢀ Integrated CMOS Control Logic  
xꢀ Integrated ESD Protection on Digital I/O  
xꢀ Single Positive Supply Voltage  
xꢀ Ultra Small LPCCTM Packaging  
xꢀ Impedance matched for 50 Ohm systems  
Product Description  
HRF-SW1030 in LPCC™ Package  
The Honeywell HRF-SW1030 is a high performance  
single pole six throw (SP6T) absorptive RF switch that  
is ideal for use in wireless basestation and handset  
applications that require minimum power and minimum  
insertion loss.  
The HRF-SW1030 is manufactured with Honeywell's  
patented Silicon On Insulator (SOI) CMOS technology,  
which provides the performance of GaAs with the  
economy and integration capabilities of conventional  
CMOS technology.  
RF Electrical Specifications @ + 25oC  
Results @ Vdd = 5.0 +/- 10%, Vss = 0 unless otherwise stated, Z0 = 50 ohms  
Parameter  
Test Condition  
Frequency  
DC – 1.0 GHz  
2.0 GHz  
Minimum  
Typical  
Maximum  
Units  
dB  
Insertion Loss  
1.7  
2.0  
2.5  
3.0  
2.1  
dB  
2.5 GHz  
2.7  
dB  
Isolation  
DC – 1.0 GHz  
2.0 GHz  
44  
34  
32  
50  
dB  
38  
dB  
3.0 GHz  
35  
dB  
VSWR*  
DC – 0.5 GHz  
0.5 – 1.5 GHz  
1.5 – 2.5 GHz  
1.2:1  
1.2:1  
1.7:1  
Ratio  
Ratio  
Ratio  
1.8:1  
1dB Compression  
Input IP3  
Input Power  
Vss=Gnd  
Vss= -3  
1.0 GHz  
1.0 GHz  
19  
28  
dBm  
dBm  
Two-Tone Inputs Up To + 5 dBm  
Vss= Gnd  
2.0 GHz  
2.0 GHz  
35  
>35  
10  
dBm  
dBm  
nS  
Vss= -3  
Trise, Tfall*  
Ton, Toff  
10% To 90%  
50% Cntl To 90%/10%Rf  
In-Band  
20  
nS  
Transients  
*By design  
10  
mV  
________________________________________________________________________________________________________  
Web Site:  
Email:  
www.mysoiservices.com  
Honeywell  
Solid State Electronics Center  
12001 State Highway 55  
mysoiservices@honeywell.com  
2002 1030W  
Published November 2002 Page 1  
Plymouth, Minnesota 55441-4799  
1-800-323-8295  

与HRF-SW1030-TR相关器件

型号 品牌 获取价格 描述 数据表
HRF-SW1031 HONEYWELL

获取价格

SP6T Absorptive RF Switch
HRF-SW1031-B HONEYWELL

获取价格

SP6T Absorptive RF Switch
HRF-SW1031-E HONEYWELL

获取价格

SP6T Absorptive RF Switch
HRF-SW1031-FL-TR HONEYWELL

获取价格

Diversity Switch, 0MHz Min, 2500MHz Max, 3.6dB Insertion Loss-Max, VQFN-24
HRF-SW1031-TR HONEYWELL

获取价格

SP6T Absorptive RF Switch
HRF-SW1040-B HONEYWELL

获取价格

SP4T, 824MHz Min, 1990MHz Max, 1 Func, 13dB Insertion Loss-Max, CMOS, ULTRA SMALL, LPCC
HRF-TX1000-T HONEYWELL

获取价格

Interface Circuit, DIE
HRFZ44N FAIRCHILD

获取价格

49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET
HRFZ44N INTERSIL

获取价格

49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET
HRG3216P-1000-B-T1 ETC

获取价格

RES SMD 100 OHM 0.1% 1W 1206