Datasheet > HRFZ44N

HRFZ44N

更新时间： 2024-11-18 22:08:15

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
9页	138K
描述
49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET

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HRFZ44N 数据手册

HRFZ44N

Data Sheet

June 1999

File Number 4752

49A, 55V, 0.022 Ohm, N-Channel UltraFET

Power MOSFET

Features

• 49A, 55V

This N-Channel power MOSFET is

manufactured using the innovative

UltraFET™ process. This advanced

• Simulation Models

- Temperature Compensated PSPICE and SABER

Electrical Models

process technology achieves the

- Spice and Saber Thermal Impedance Models

- www.semi.Intersil.com/families/models.htm

lowest possible on-resistance per silicon area, resulting in

outstanding performance. This device is capable of

withstanding high energy in the avalanche mode and the

diode exhibits very low reverse recovery time and stored

charge. It was designed for use in applications where power

efﬁciency is important, such as switching regulators,

switching converters, motor drivers, relay drivers, low-

voltage bus switches, and power management in portable

and battery-operated products.

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Formerly developmental type TA75329.

Ordering Information

PART NUMBER

PACKAGE

BRAND

HRFZ44N

TO-220AB

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.

12 3 4 5 6 7...9

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HRFZ44N 替代型号

型号	品牌	替代类型	描述	数据表
AUIRFZ44N	INFINEON	功能相似	Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Me
IRFZ46NPBF	INFINEON	功能相似	HEXFET㈢ Power MOSFET
IRFZ44NPBF	INFINEON	功能相似	HEXFET-R Power MOSFET

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