是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | DMA | 包装说明: | DIMM, DIMM204,24 |
针数: | 204 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.36 |
风险等级: | 5.84 | Is Samacsys: | N |
访问模式: | SINGLE BANK PAGE BURST | 最长访问时间: | 20 ns |
其他特性: | AUTO/SELF REFRESH | 最大时钟频率 (fCLK): | 533 MHz |
I/O 类型: | COMMON | JESD-30 代码: | R-XDMA-N204 |
JESD-609代码: | e1 | 长度: | 67.6 mm |
内存密度: | 8589934592 bit | 内存集成电路类型: | DDR DRAM MODULE |
内存宽度: | 64 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 204 |
字数: | 134217728 words | 字数代码: | 128000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | 组织: | 128MX64 | |
输出特性: | 3-STATE | 封装主体材料: | UNSPECIFIED |
封装代码: | DIMM | 封装等效代码: | DIMM204,24 |
封装形状: | RECTANGULAR | 封装形式: | MICROELECTRONIC ASSEMBLY |
峰值回流温度(摄氏度): | 260 | 电源: | 1.5 V |
认证状态: | Not Qualified | 刷新周期: | 8192 |
座面最大高度: | 3.8 mm | 自我刷新: | YES |
最大待机电流: | 0.1 A | 子类别: | DRAMs |
最大压摆率: | 0.52 mA | 最大供电电压 (Vsup): | 1.575 V |
最小供电电压 (Vsup): | 1.425 V | 标称供电电压 (Vsup): | 1.5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | OTHER | 端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式: | NO LEAD | 端子节距: | 0.6 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 20 |
宽度: | 30 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HMT312S6BFR6C-H9 | HYNIX |
获取价格 |
204pin DDR3 SDRAM SODIMM | |
HMT312S6BFR6C-PB | HYNIX |
获取价格 |
204pin DDR3 SDRAM SODIMM | |
HMT312S6DFR6A | HYNIX |
获取价格 |
DDR3L SDRAM Unbuffered SODIMMs Based on 2Gb D-die | |
HMT312S6DFR6A-G7 | HYNIX |
获取价格 |
DDR3L SDRAM Unbuffered SODIMMs Based on 2Gb D-die | |
HMT312S6DFR6A-H9 | HYNIX |
获取价格 |
DDR3L SDRAM Unbuffered SODIMMs Based on 2Gb D-die | |
HMT312S6DFR6A-PB | HYNIX |
获取价格 |
DDR3L SDRAM Unbuffered SODIMMs Based on 2Gb D-die | |
HMT312S6DFR6C | HYNIX |
获取价格 |
DDR3 SDRAM Unbuffered SODIMMs Based on 2Gb D-die | |
HMT312S6DFR6C-G7 | HYNIX |
获取价格 |
DDR3 SDRAM Unbuffered SODIMMs Based on 2Gb D-die | |
HMT312S6DFR6C-H9 | HYNIX |
获取价格 |
DDR3 SDRAM Unbuffered SODIMMs Based on 2Gb D-die | |
HMT312S6DFR6C-PB | HYNIX |
获取价格 |
DDR3 SDRAM Unbuffered SODIMMs Based on 2Gb D-die |