HMS28N65/HMS28N65D/HMS28N65F
N-Channel Super Junction Power MOSFET Ⅲ
General Description
The series of devices use advanced trench gate super
junction technology and design to provide excellent RDS(ON)
with low gate charge. This super junction MOSFET fits the
industry’s AC-DC SMPS requirements for PFC, AC/DC
power conversion, and industrial power applications.
VDS
650
110
28
V
mΩ
A
RDS(ON)TYP
ID
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
Application
● Power factor correction(PFC)
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply(UPS)
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
TO-263
Marking
HMS28N65D
HMS28N65
HMS28N65F
HMS28N65D
HMS28N65
HMS28N65F
TO-220
TO-220F
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25℃)
HMS28N65D
HMS28N65
Parameter
Symbol
HMS28N65F
Unit
650
V
V
Drain-Source Voltage (VGS=0V)
VDS
VGS
±30
Gate-Source Voltage (VDS=0V) AC (f>1 Hz)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
28
18
28*
18*
A
ID (DC)
ID (DC)
IDM (pluse)
PD
A
(Note 1)
112
260
2.08
112*
35
A
Pulsed drain current
Maximum Power Dissipation(Tc=25℃)
W
Derate above 25°C
0.28
W/°C
mJ
A
(Note 2)
676
5.2
EAS
IAR
Single pulse avalanche energy
(Note 1)
Avalanche current
Repetitive Avalanche energy ,tAR limited by Tjmax
(Note 1)
3.2
EAR
mJ
1