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HMS28N65 PDF预览

HMS28N65

更新时间: 2022-02-26 11:57:52
品牌 Logo 应用领域
华之美 - HMSEMI /
页数 文件大小 规格书
10页 797K
描述
N-Channel Super Junction Power MOSFET Ⅲ

HMS28N65 数据手册

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HMS28N65/HMS28N65D/HMS28N65F  
N-Channel Super Junction Power MOSFET   
General Description  
The series of devices use advanced trench gate super  
junction technology and design to provide excellent RDS(ON)  
with low gate charge. This super junction MOSFET fits the  
industry’s AC-DC SMPS requirements for PFC, AC/DC  
power conversion, and industrial power applications.  
VDS  
650  
110  
28  
V
mΩ  
A
RDS(ON)TYP  
ID  
Features  
New technology for high voltage device  
Low on-resistance and low conduction losses  
Small package  
Ultra Low Gate Charge cause lower driving requirements  
100% Avalanche Tested  
ROHS compliant  
Application  
Power factor correctionPFC)  
Switched mode power supplies(SMPS)  
Uninterruptible Power SupplyUPS)  
Schematic diagram  
Package Marking And Ordering Information  
Device  
Device Package  
TO-263  
Marking  
HMS28N65D  
HMS28N65  
HMS28N65F  
HMS28N65D  
HMS28N65  
HMS28N65F  
TO-220  
TO-220F  
TO-263  
TO-220  
TO-220F  
Table 1. Absolute Maximum Ratings (TC=25)  
HMS28N65D  
HMS28N65  
Parameter  
Symbol  
HMS28N65F  
Unit  
650  
V
V
Drain-Source Voltage (VGS=0V)  
VDS  
VGS  
±30  
Gate-Source Voltage (VDS=0V) AC (f>1 Hz)  
Continuous Drain Current at Tc=25°C  
Continuous Drain Current at Tc=100°C  
28  
18  
28*  
18*  
A
ID (DC)  
ID (DC)  
IDM (pluse)  
PD  
A
(Note 1)  
112  
260  
2.08  
112*  
35  
A
Pulsed drain current  
Maximum Power Dissipation(Tc=25)  
W
Derate above 25°C  
0.28  
W/°C  
mJ  
A
(Note 2)  
676  
5.2  
EAS  
IAR  
Single pulse avalanche energy  
(Note 1)  
Avalanche current  
Repetitive Avalanche energy tAR limited by Tjmax  
(Note 1)  
3.2  
EAR  
mJ  
1

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