Datasheet > HMS29N65F

HMS29N65F

更新时间： 2024-11-12 02:52:11

品牌	Logo	应用领域
华之美 - HMSEMI		/
页数	文件大小	规格书
9页	1010K
描述
N-Channel Super Junction Power MOSFET â¢

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中文翻译

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数据手册

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HMS29N65F 数据手册

HMS29N65/HMS29N65D/HMS29N65F

N-Channel Super Junction Power MOSFET Ⅲ

General Description

The series of devices use advanced trench gate super

junction technology and design to provide excellent R^DS(ON)

with low gate charge. This super junction MOSFET fits the

industry’s AC-DC SMPS requirements for PFC, AC/DC

power conversion, and industrial power applications.

V_DS

650

mΩ

R_DS(ON)TYP

I_D

Features

●Optimized body diode reverse recovery performance

●Low on-resistance and low conduction losses

●Small package

●Ultra Low Gate Charge cause lower driving requirements

●100% Avalanche Tested

●ROHS compliant

Application

Schematic diagram

● Power factor correction（PFC）

● Switched mode power supplies(SMPS)

● Uninterruptible Power Supply（UPS）

● LLC Half-bridge

 Intrinsic fast-recovery body diode

Package Marking And Ordering Information

Device

Device Package

TO-263

Marking

HMS29N65D

HMS29N65

HMS29N65F

HMS29N65D

HMS29N65

HMS29N65F

TO-220

TO-220F

TO-263

TO-220

TO-220F

Table 1. Absolute Maximum Ratings (T_C=25℃)

HMS29N65D

Parameter

Symbol

HMS29N65F

Unit

HMS29N65

650

Drain-Source Voltage (V^GS=0V）

V^DS

V^GS

±30

Gate-Source Voltage (V^DS=0V) AC (f>1 Hz)

Continuous Drain Current at Tc=25°C

Continuous Drain Current at Tc=100°C

29*

20*

I_{D (DC)}

I_{DM (pluse)}

P_D

(Note 1)

87*

Pulsed drain current

Maximum Power Dissipation(Tc=25℃)

260

2.08

Derate above 25°C

0.28

W/°C

(Note 2)

676

5.2

E^AS

I_AR

Single pulse avalanche energy

(Note 1)

Avalanche current

Repetitive Avalanche energy ，t_ARlimited by T_jmax

(Note 1)

3.2

E_AR

12 3 4 5 6 7...9

中文翻译

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