Datasheet > HMS28N65

HMS28N65

更新时间： 2022-02-26 11:57:52

品牌	Logo	应用领域
华之美 - HMSEMI		/
页数	文件大小	规格书
10页	797K
描述
N-Channel Super Junction Power MOSFET â¢

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中文翻译

获取价格

数据手册

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HMS28N65 数据手册

HMS28N65/HMS28N65D/HMS28N65F

HMS28N65D

Parameter

Symbol

HMS28N65F

Unit

HMS28N65

Drain Source voltage slope, V_DS≤480 V,

Reverse diode dv/dt，V_DS≤480 V,I_SD<I_D

Operating Junction and Storage Temperature Range

* limited by maximum junction temperature

dv/dt

V/ns

°C

-55...+150

T_J,T_STG

Table 2. Thermal Characteristic

HMS28N65D

Parameter

Symbol

HMS28N65F

Unit

HMS28N65

Thermal Resistance，Junction-to-Case（Maximum）

Thermal Resistance，Junction-to-Ambient （Maximum）

R_thJC

R_thJA

0.48

3.57

°C /W

Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ Max

Unit

On/off states

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current(Tc=25℃)

Zero Gate Voltage Drain Current(Tc=125℃)

Gate-Body Leakage Current

Gate Threshold Voltage

BV_DSS

I_DSS

V_GS=0V I_D=250μA

V_DS=650V,V_GS=0V

V_GS=±20V,V_DS=0V

V_DS=V_GS,I_D=250μA

V_GS=10V, I_D=14A

650

μA

I_DSS

100

±100

I_GSS

V_GS(th)

R_DS(ON)

3.5

Drain-Source On-State Resistance

Dynamic Characteristics

Input Capacitance

110

130

mΩ

C_lss

C_oss

C_rss

Q_g

2070

120

0.5

V_DS=50V,V_GS=0V,

F=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

37.5

_DS=480V,I_D=28A,

V_GS=10V

Gate-Source Charge

Q_gs

Q_gd

Gate-Drain Charge

11.5

Switching times

Turn-on Delay Time

t_d(on)

t_r

t_d(off)

t_f

Turn-on Rise Time

V_DD=380V,I_D=14A,

R_G=2.3Ω,V_GS=10V

Turn-Off Delay Time

Turn-Off Fall Time

Source- Drain Diode Characteristics

Source-drain current(Body Diode)

Pulsed Source-drain current(Body Diode)

Forward On Voltage

I_SD

I_SDM

V_SD

t_rr

112

1.2

T_C=25°C

Tj=25°C,I_SD=28A,V_GS=0V

0.9

350

5.4

Reverse Recovery Time

Reverse Recovery Charge

Peak Reverse Recovery Current

Q_rr

Tj=25°C,I_F=14A,di/dt=100A/μs

I_rrm

Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature

2. Tj=25℃,VDD=50V,VG=10V, R_G=25Ω

123 4 5 6 7...10

中文翻译

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