Datasheet > HMS1M32Z8S-10

HMS1M32Z8S-10

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
HANBIT		静态存储器
页数	文件大小	规格书
10页	191K
描述
High-Speed SRAM MODULE 4Mbyte(1M x 32-Bit)

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HMS1M32Z8S-10 数据手册

HANBit

HMS1M32M8S

DC AND OPERATING CHARACTERISTICS (2)

MAX

-17

DESCRIPTION

TEST CONDITIONS

Min. Cycle, 100% Duty

/CE=V_IL, V_IN=V_IHor V_IL,

I_OUT=0mA

SYMBOL

-15

-20

UNIT

Power Supply

Current: Operating

l_CC

170

165

160

Min. Cycle, /CE=V_IH

l_SB

Power Supply

Current: Standby

f=0MHZ, /CE V -0.2V,

≥

l_SB1

V_INV -0.2V or V 0.2V

≥

≤

CAPACITANCE

DESCRIPTION

TEST CONDITIONS

V_I/O=0V

SYMBOL

MAX

UNIT

Input /Output Capacitance

Input Capacitance

C_I/O

C_IN

V_IN=0V

: Capacitance is sampled and not 100% tested

NOTE

AC CHARACTERISTICS ^{(0 C}

TEST CONDITIONS

70 C ; Vcc = 5V 0.5V, unless otherwise specified)

≤

PARAMETER

VALUE

0.V to 3V

3ns

Input Pulse Level

Input Rise and Fall Time

Input and Output Timing Reference Levels

Output Load

1.5V

See below

Output

Load

Output Load (B)

for t_HZ, t_LZ, t_WHZ, t_OW, t_OLZ& t_OHZ

+5V

480

Ω

480

Ω

D_OUT

255

Ω

30pF*

255

Ω

5pF*

* Including scope and jig capacitance

HANBit Electronics Co.,Ltd.

1 2 345 6 7...10

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