HMS24N50F,HMS24N50
HMS24N50T,HMS24N50A
500V N-Channel MOSFET
Features
-25A, 500V, RDS(on) typ.= 0.12Ω@VGS = 10 V
General Description
Features
This Power MOSFET is produced using H&M Semi’s
Advanced Super-Junction technology.
- Low gate charge ( typical 70nC)
- High ruggedness
- 7.6A, 500V, RDS(on) typ. = 0.5Ω@VGS = 10 V
This advanced technology has-bLoewegnatee schpaergcei(atyllpyicatal i2lo5nrCe)d
- Fast switching
- High ruggedness
to minimize conduction loss, provide superior switching
- Fast switching
performance, and withstand high energy pulse in the
- 100% avalanche tested
- 100% avalanche tested
- Improved dv/dt capability
avalanche and commutation mode.
- Improved dv/dt capability
These devices are well suited for AC/DC power conversion
D
HMS24N50F
HMS24N50
HMS24N50T
HMS24N50A
G
TO-220
TO-220F
G
TO-247
G
TO-3P
G D S
G D S
D
S
D
S
S
Absolute Maximum Ratings
TC = 25°C unless otherwise noted
Symbol
VDSS
ID
Parameter
TO-220F
Units
TO-220/247/3P
Drain-Source Voltage
Drain Current
500
V
A
- Continuous (TC = 25℃)
- Continuous (TC = 100℃)
(Note 1)
25
15
70
25*
15*
70*
A
IDM
VGSS
EAS
IAR
Drain Current - Pulsed
Gate-Source Voltage
A
±30
485
3.5
1
V
Single Pulsed Avalanche Energy
Avalanche Current
(Note 2)
(Note 1)
(Note 1)
(Note 3)
mJ
A
EAR
dv/dt
Repetitive Avalanche Energ
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25℃)
mJ
V/ns
W
15
151
31
PD
W/℃
℃
- Derate above 25℃
Operating and Storage Temperature Range
0.67
0.25
TJ, TSTG
TL
-55 to +150
300
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
℃
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Value
Symbol
Parameter
Units
TO220/247/3P
TO220F
RθJC
RθJS
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
0.83
0.5
62
4.0
-
℃/W
℃/W
℃/W
80