Datasheet > HMS24N50A

HMS24N50A

更新时间： 2022-02-26 11:32:59

品牌	Logo	应用领域
华之美 - HMSEMI		/
页数	文件大小	规格书
9页	1322K
描述
500V N-Channel MOSFET

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HMS24N50A 数据手册

HMS24N50F,HMS24N50

HMS24N50T,HMS24N50A

500V N-Channel MOSFET

Features

-25A, 500V, RDS(on) typ.= 0.12Ω@VGS = 10 V

General Description

Features

This Power MOSFET is produced using H&M Semi’s

Advanced Super-Junction technology.

- Low gate charge ( typical 70nC)

- High ruggedness

- 7.6A, 500V, R_{DS(on) typ.}= 0.5Ω@V_GS= 10 V

This advanced technology has_-b_Loe_we_gn_ate_es_chp_ae_rgc_ei₍a_tyll_py_icata_li₂lo_5nr_Ce₎d

- Fast switching

- High ruggedness

to minimize conduction loss, provide superior switching

- Fast switching

performance, and withstand high energy pulse in the

- 100% avalanche tested

- Improved dv/dt capability

avalanche and commutation mode.

- Improved dv/dt capability

These devices are well suited for AC/DC power conversion

HMS24N50F

HMS24N50

HMS24N50T

HMS24N50A

TO-220

TO-220F

TO-247

TO-3P

G D S

Absolute Maximum Ratings

TC = 25°C unless otherwise noted

Symbol

VDSS

Parameter

TO-220F

Units

TO-220/247/3P

Drain-Source Voltage

Drain Current

500

- Continuous (TC = 25℃)

- Continuous (TC = 100℃)

(Note 1)

25*

15*

70*

IDM

VGSS

EAS

IAR

Drain Current - Pulsed

Gate-Source Voltage

±30

485

3.5

Single Pulsed Avalanche Energy

Avalanche Current

(Note 2)

(Note 1)

(Note 3)

EAR

dv/dt

Repetitive Avalanche Energ

Peak Diode Recovery dv/dt

Power Dissipation (TC = 25℃)

V/ns

151

W/℃

℃

- Derate above 25℃

Operating and Storage Temperature Range

0.67

0.25

TJ, TSTG

-55 to +150

300

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

℃

*Drain current limited by maximum junction temperature.

Thermal Characteristics

Value

Symbol

Parameter

Units

TO220/247/3P

TO220F

RθJC

RθJS

RθJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

0.83

0.5

4.0

℃/W

12 3 4 5 6 7...9

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