Datasheet > HMS21N70

HMS21N70

更新时间： 2022-02-26 13:30:04

品牌	Logo	应用领域
华之美 - HMSEMI		/
页数	文件大小	规格书
9页	934K
描述
N-Channel Super Junction Power MOSFET II

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HMS21N70 数据手册

HMS21N70,HMS21N70F

N-Channel Super Junction Power MOSFET II

General Description

The series of devices use advanced super junction

technology and design to provide excellent R^DS(ON)with low

gate charge. This super junction MOSFET fits the industry’s

AC-DC SMPS requirements for PFC, AC/DC power

conversion, and industrial power applications.

V_DS

700

165

mΩ

R_{DS(ON) TYP.}

I_D

Features

●New technology for high voltage device

●Low on-resistance and low conduction losses

●Small package

●Ultra Low Gate Charge cause lower driving requirements

●100% Avalanche Tested

●ROHS compliant

Application

● Power factor correction（PFC）

● Switched mode power supplies(SMPS)

● Uninterruptible Power Supply（UPS）

Schematic diagram

Package Marking And Ordering Information

Device

Device Package

Marking

HMS21N70

HMS21N70F

TO-220

HMS21N70

HMS21N70F

TO-220F

TO-220 T O-220F

Table 1. Absolute Maximum Ratings (T_C=25℃)

Parameter

Symbol

V^DS

HMS21N70

HMS21N70F

Unit

700

Drain-Source Voltage (VGS=0V）

±30

Gate-Source Voltage (VDS=0V)

VGS

Continuous Drain Current at Tc=25°C

13.2

21*

13.2*

63*

I_{D (DC)}

I_{DM (pluse)}

P_D

Continuous Drain Current at Tc=100°C

(Note 1)

Pulsed drain current

Maximum Power Dissipation(Tc=25℃)

200

1.6

Derate above 25°C

0.27

W/°C

(Note 2)

690

EAS

Single pulse avalanche energy

Avalanche current^{(Note 1)}

I_AR

Repetitive Avalanche energy ，t_ARlimited by T_jmax

(Note 1)

E_AR

12 3 4 5 6 7...9

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