Datasheet > 存储 > DRAM> HMD4M1Z1-5

HMD4M1Z1-5

更新时间： 2024-11-09 03:28:15

品牌	Logo	应用领域
HANBIT		存储动态存储器
页数	文件大小	规格书
6页	192K
描述
4Mbit(4Mx1bit) Fast Page Mode, 1K Refresh, 20Pin ZIP, 5V Design

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中文翻译

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技术参数
数据手册

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HMD4M1Z1-5 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.75
Is Samacsys：	N	Base Number Matches：	1

HMD4M1Z1-5 数据手册

HANBit

HMD4M1Z1

4Mbit(4Mx1bit) Fast Page Mode, 1K Refresh, 20Pin ZIP, 5V Design

Part No. HMD4M1Z1

DESCRIPTION

The HMD4M1Z1 is an 4M x 1 bits Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of

memory cells

within the same row. Power supply voltage (+5V ), access time (-5, -6), power consumption(Normal or Low power), and package

type (ZIP) are optional features of this Module. The HMD4M1Z1 have CAS-before-RAS refresh, RAS-only refresh and Hidden

refresh capabilities.

The HMD4M1Z1 is optimized for application to the systems, which are required high density and large capacity such as main

memory for main frames and mini computers, personal computer and high performance microprocessor systems.

The HMD4M1Z1 provides common data and outputs.

Features

PIN ASSIGNMENT

w Fast Page Mode operation

SYMBOL

w CAS-before-RAS refresh capability

w RAS-only and Hidden refresh capability

w Fast parallel test mode capability

w TTL(5V) compatible inputs and outputs

w Early write or output enable controlled write

w Available in 20pin ZIP packages

w Single +5V± 10% power supply

w 1,024 Refresh Cycles/16ms

w Performance Range

/CAS

DOUT

V_SS

DIN

/WE

/RAS

Speed

t_RAC

t_CAC

t_RC

t_PC

A9NC

HMD4M1Z1-5

HMD4M1Z1-6

110

PIN DESCRIPTION

V_CC

FUNCTION

Read/Write

Enable

Address Inputs

/WE

A0 – A9

DQ0 –

Data

Input/Output

Power

(+5V)

Vcc

DQ3

Row Address

Strobe

Column

Address Strobe

Vss

Ground

/RAS

/CAS

Connection

URL:www.hbe.co.kr

REV.1.0 (August. 2002)

HANBit Electronics Co.,Ltd.

12 3 4 5 6

中文翻译

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HMD4M32M2VEG-6	HANBIT	获取价格	16Mbyte(4Mx32) DRAM SIMM EDO MODE, 4K Refresh, 3.3V