Datasheet > HMD4M32M2EG-6

HMD4M32M2EG-6

更新时间： 2024-09-17 02:56:43

品牌	Logo	应用领域
HANBIT		/
页数	文件大小	规格书
7页	54K
描述
16Mbyte(4Mx32) 72-pin SIMM EDO Mode, 4K Refresh, 5V

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中文翻译

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技术参数
数据手册

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HMD4M32M2EG-6 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.75
Base Number Matches：	1

HMD4M32M2EG-6 数据手册

HANBit

HMD4M32M2EG

16Mbyte(4Mx32) 72-pin SIMM EDO Mode, 4K Refresh, 5V

Part No. HMD4M32M2E, HMD4M32M2EG

GENERAL DESCRIPTION

The HMD4M32M2E is a 4M x 32 bit dynamic RAM high-density memory module. The module consists of two CMOS 4M

x 16 bit DRAMs in 50-pin TSOP packages mounted on a 72-pin. A 0.1 or 0.22uF decoupling capacitor is mounted on the

printed circuit board for each DRAM components. The module is a single In-line memory module with edge connections

and is intended for mounting in to 72-pin edge connector sockets. All module components may be powered from a single

5V DC power supply. All inputs and outputs are TTL-compatible.

FEATURES

w Part Identification

HMD4M32M2E----4K Cycles/64ms Ref. Solder

PIN ASSIGNMENT

HMD4M32M2EG- 4K Cycles/64ms Ref. Gold

w Access times : 50, 60ns

PIN SYMBOL PIN

SYMBOL

DQ22

DQ7

DQ23

PIN SYMBOL

w High-density 16MByte design

Vss

DQ0

DQ16

DQ1

DQ17

DQ2

DQ18

DQ3

DQ19

Vcc

DQ8

DQ24

DQ9

w Single +5V± 0.5V power supply

wJEDEC standard pinout

w EDO Mode operation

DQ25

DQ10

DQ26

DQ11

DQ27

DQ12

DQ28

Vcc

A11

w TTL compatible inputs and outputs

w FR4-PCB design

Vcc

OPTIONS

MARKING

w Timing

50ns access

60ns access

w Packages

72-pin SIMM

-5

-6

DQ29

DQ13

DQ30

DQ14

DQ31

DQ15

Vss

/CAS0

/CAS2

/CAS3

/CAS1

/RAS0

PRESENCE DETECT PINS

PD1

PD2

PD3

PD4

50ns

Vss

60ns

Vss

A10

DQ4

PD1

PD2

DQ20

PD3

Vss

DQ5

DQ21

DQ6

/WE

PD4

Vss

PERFORMANCE RANGE

Speed

tRAC

50ns

60ns

tCAC

13ns

15ns

tRC

90ns

110ns

tHPC

26ns

30ns

URL:www.hbe.co.kr

REV.1.0 (August.2002)

HANBit Electronics Co.,Ltd.

12 3 4 5 6 7

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HMD4M32M8EAG-5	HANBIT	获取价格	16Mbyte(4Mx32) 72-pin EDO MODE, 2K/4K Ref. SIMM Design 5V