Datasheet > HMC7950

HMC7950

更新时间： 2024-11-22 01:16:43

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描述
MMIC Low Noise Amplifier

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HMC7950 数据手册

2 GHz to 28 GHz, GaAs

pHEMT MMIC Low Noise Amplifier

Data Sheet

HMC7950

FEATURES

FUNCTIONAL BLOCK DIAGRAM

Output power for 1 dB compression (P1dB): 16 dBm typical

Saturated output power (P_SAT): 19.5 dBm typical

Gain: 15 dB typical

Noise figure: 2.0 dB typical

Output third-order intercept (IP3): 26 dBm typical

Supply voltage: 5 V at 64 mA

50 Ω matched input/output

NIC

HMC7950

APPLICATIONS

Test instrumentation

Military and space

PACKAGE

BASE

GND

Figure 1.

GENERAL DESCRIPTION

The HMC7950 is a gallium arsenide (GaAs), pseudomorphic

high electron mobility transistor (pHEMT), monolithic microwave

integrated circuit (MMIC). The HMC7950 is a wideband low

noise amplifier that operates between 2 GHz and 28 GHz. The

amplifier typically provides 15 dB of gain, 2.0 dB of noise figure,

26 dBm of output IP3, and 16 dBm of output power for 1 dB gain

compression, requiring 64 mA from a 5 V supply. The HMC7950

is self biased with only a single positive supply needed to

achieve a drain current, I_DD, of 64 mA. The HMC7950 also has a

gain control option, V_GG2. The HMC7950 amplifier input/outputs

are internally matched to 50 Ω and dc blocked. It comes in a

6 mm × 6 mm, 16-terminal LCC SMT ceramic package that is

easy to handle and assemble.

Rev. A

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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rightsof third parties that may result fromits use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

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One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

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