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HMC799LP3E

更新时间： 2024-11-21 05:36:15
品牌 Logo 应用领域
HITTITE 射频和微波射频放大器微波放大器
页数 文件大小 规格书
8页 424K
描述
DC - 700 MHz, 10 kOhm TRANSIMPEDANCE AMPLIFIER

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中文翻译

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HMC799LP3E 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：TransferredReach Compliance Code：compliant
ECCN代码：EAR99风险等级：8.47
其他特性：LOW NOISE特性阻抗：50 Ω
构造：COMPONENT增益：42 dB
JESD-609代码：e3最大工作频率：700 MHz
最小工作频率：最高工作温度：85 °C
最低工作温度：-40 °C射频/微波设备类型：WIDE BAND LOW POWER
端子面层：Matte Tin (Sn)Base Number Matches：1

HMC799LP3E 数据手册

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HMC799LP3E  
v01.1009  
DC - 700 MHz, 10 kOhm  
TRANSIMPEDANCE AMPLIFIER  
Typical Applications  
The HMC799LP3E is ideal for:  
• Laser Sensor  
Features  
10 kOhm Transimpedance  
Very Low Noise: 150nA Input RMS Noise  
over 700 MHz Bandwidth  
• FDDI Receiver  
700 MHz Analog Bandwidth  
12  
• CATV FM Analog Receiver  
• Wideband Gain Block  
• Low Noise RF Applications  
Wide Dynamic Range: +65 dB  
Low Power: 70mA from Single +5V Supply  
16 Lead 3x3 mm SMT Package: 9mmꢀ  
General Description  
Functional Diagram  
The HMC799LP3E is DC to 700 MHz Transimpe-  
dance amplifier designed for opto-electronic laser  
sensor applications, FDDI receivers and receiver  
systems employing optical to electrical conversion.  
This amplifier provides a single-ended output voltage  
that is proportional to an applied current at its input  
port. This current is typically provided by a photo-  
diode. Operating from  
a
single +5V supply,  
HMC799LP3E features very low input referred noise,  
and very large electrical input dynamic range exce-  
eding 65 dB. 10 kOhm or 80 dB-Ohms transimpedance  
gain provides very good sensitivity at higher data rates.  
The output of HMC799LP3E is internally matched to  
50 ohms. External matching is not necessary. The  
HMC799LP3E exhibits excellent gain and output  
power stability over temperature, while requiring a  
minimal number of external bias components.  
Electrical Specifications, TA = +25° C, Vcc1 = Vcc2 = Vcc3 = +5V  
Parameter  
Conditions  
Min.  
Typ.  
Max.  
Units  
DC Specifications  
Power Supply Voltage  
Power Supply Current  
Input Impedance  
4.5  
60  
5
5.5  
80  
V
mA  
Ohm  
V
Vcc = 5V  
70  
@ 350 MHz  
175  
2.1  
Input Bias Voltage  
AC Specifications  
Transimpedance  
@ 100 MHz, RL = 50 Ohm  
7.5  
10  
700  
42  
12.5  
k Ohms  
MHz  
Transimpedance 3-dB Bandwidth  
Small Signal Gain  
600  
S21  
dB  
Cpd [1] <1pF, @ 200 MHz  
Cpd [1] = 1pF, @ 200 MHz  
Cpd [1] = 2pF, @ 200 MHz  
Cpd [1] = 3pF, @ 200 MHz  
4.6  
4.8  
5.2  
5.6  
pA / √Hz  
pA / √Hz  
pA / √Hz  
pA / √Hz  
Input Referred Current Noise Density  
[1] Cpd is the total parasitic capacitance value arises from addition of input photo diode. This value includes photo diode parasitic capacitance,  
PCB trace capacitance and package parasitic capacitance.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
12 - 2  
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