Datasheet > HMC7992LP3DETR

HMC7992LP3DETR

更新时间： 2024-11-21 21:18:31

品牌	Logo	应用领域
亚德诺 - ADI		射频微波
页数	文件大小	规格书
14页	385K
描述
Nonreflective, Silicon SP4T Switch, 0.1 GHz to 6.0 GHz

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HMC7992LP3DETR 数据手册

Nonreflective, Silicon SP4T Switch,

0.1 GHz to 6.0 GHz

Data Sheet

HMC7992

FEATURES

FUNCTIONAL BLOCK DIAGRAM

GND

RFC

GND

Nonreflective, 50 Ω design

High isolation: 45 dB typical at 2 GHz

Low insertion loss: 0.6 dB at 2 GHz

High power handling

33 dBm through path

27 dBm terminated path

HMC7992

RF1

GND

RF2

RF4

GND

RF3

High linearity

1 dB compression (P1dB): 35 dBm typical

Input third-order intercept (IIP3): 58 dBm typical

ESD rating: 2 kV human body model (HBM), Class 2

Single positive supply: 3.3 V to 5.0 V

Standard TTL-, CMOS-, and 1.8 V-compatible control

16-lead, 3 mm × 3 mm LFCSP package (9 mm²)

Pin compatible with the HMC241ALP3E

2:4 TTL DECODER

PACKAGE

BASE

GND

APPLICATIONS

Figure 1.

Cellular/4G infrastructure

Wireless infrastructure

Automotive telematics

Mobile radios

Test equipment

GENERAL DESCRIPTION

The HMC7992 is a general-purpose, nonreflective, 0.1 GHz to

6.0 GHz, silicon, single-pole, four-throw (SP4T) switch in a

leadless, surface-mount package. The switch is ideal for cellular

infrastructure applications, offers high isolation of 45 dB typical

at 2 GHz, and a low insertion loss of 0.6 dB at 2 GHz. It offers

excellent power handling capability up to 6.0 GHz, with input

power of 1 dB compression point (P1dB) of 35 dBm at 5 V

operation. The HMC7992 has good low frequency input power

handling below 0.1 GHz and can operate well down to 10 kHz,

with a typical 1 dB compression of 21 dBm (see Figure 21) and

an IIP3 of 37 dBm (see Figure 22) at 1 MHz.

The on-chip circuitry allows the HMC7992 to operate at a single,

positive supply voltage range from 3.3 V to 5 V, and as well as a

single, positive control voltage from 0 V to 1.8 V/3.3 V/5.0 V. A

2:4 decoder integrated in the switch requires only two controlled

input signals, with a positive control voltage range from 0 V to

1.8 V/3.3 V/5.0 V, to select one of the four radio frequency (RF)

paths.

Rev. 0

Document Feedback

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registeredtrademarks arethe property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

Technical Support

www.analog.com

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与HMC7992LP3DETR相关器件

型号	品牌	获取价格	描述	数据表
HMC799LP3E	HITTITE	获取价格	DC - 700 MHz, 10 kOhm TRANSIMPEDANCE AMPLIFIER
HMC799LP3E	ADI	获取价格	DC - 700 MHz, 10 kOhm Transimpedance Amplifier SMT
HMC799LP3E_1	HITTITE	获取价格	DC - 700 MHz, 10 kOhm TRANSIMPEDANCE AMPLIFIER
HMC799LP3E_10	HITTITE	获取价格	DC - 700 MHz, 10 kOhm TRANSIMPEDANCE AMPLIFIER
HMC799LP3ETR	ADI	获取价格	DC - 700 MHz, 10 kOhm Transimpedance Amplifier SMT
HMC800LP3E	HITTITE	获取价格	10 dB GaAs MMIC 1-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, DC - 10 GHz
HMC800LP3ETR	HITTITE	获取价格	Variable Attenuator, GAAS
HMC801LP3E	HITTITE	获取价格	15 dB GaAs MMIC 1-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, DC - 10 GHz
HMC801LP3ETR	ADI	获取价格	RF/MICROWAVE VARIABLE ATTENUATOR
HMC801LP3ETR	HITTITE	获取价格	Variable Attenuator

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