Datasheet > HMC7885

HMC7885

更新时间： 2024-11-28 01:16:47

品牌	Logo	应用领域
亚德诺 - ADI		高功率电源射频微波
页数	文件大小	规格书
11页	304K
描述
2 GHz to 6 GHz, 45 dBm Power Amplifier

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HMC7885 数据手册

2 GHz to 6 GHz, 45 dBm Power Amplifier

Data Sheet

HMC7885

FEATURES

FUNCTIONAL BLOCK DIAGRAM

2 GHz to 6 GHz

21 dB typical small signal gain

45 dBm typical saturated RF output power (P_OUT

18-lead, hermetically sealed module

−30°C to +60°C operating temperature

VG1

NIC

)

GND

VDD1

GND

VG1

GND

RFIN

RFOUT

APPLICATIONS

RFIN

RFOUT

Test and measurement equipment

Communications

Electronic warfare (EW)

Military

GND

RFIN

RFOUT

VG2

NIC

GND

VDD2

Traveling wave tube (TWT) replacements

SATCOM

GND

VG2

Commercial and military radars

Figure 1.

GENERAL DESCRIPTION

The HMC7885 is a 32 W gallium nitride (GaN), monolithic

microwave integrated circuit (MMIC) power amplifier (PA)

module that operates between 2 GHz and 6 GHz, and is provided

in an 18-lead hermetically sealed module. The amplifier typically

provides 21 dB of small signal gain and 45 dBm of saturated radio

frequency (RF) output power. The amplifier draws 2200 mA of

quiescent current (I_DD) from a 28 V dc supply. The RF input and

output are dc blocked and matched to 50 Ω for ease of use.

Rev. 0

Document Feedback

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rightsof third parties that may result fromits use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks andregisteredtrademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

Technical Support

www.analog.com

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