21 GHz to 24 GHz,
GaAs, MMIC, I/Q Upconverter
Data Sheet
HMC7912
FEATURES
GENERAL DESCRIPTION
Conversion gain: 15 dB typical
Sideband rejection: 22 dBc typical
The HMC7912 is a compact, gallium arsenide (GaAs), pseudo-
morphic (pHEMT), monolithic microwave integrated circuit
(MMIC) upconverter in a RoHS compliant, low stress, injection
molded plastic LFCSP package that operates from 21 GHz to
24 GHz. This device provides a small signal conversion gain of
15 dB with 22 dBc of sideband rejection. The HMC7912 uses a
variable gain amplifier preceded by an in-phase/quadrature (I/Q)
mixer that is driven by an active 2× LO multiplier. IF1 and IF2
mixer inputs are provided, and an external 90° hybrid is needed to
select the required sideband. The I/Q mixer topology reduces
the need for filtering of the unwanted sideband. The HMC7912
is a much smaller alternative to hybrid style single sideband (SSB)
upconverter assemblies, and it eliminates the need for wire
bonding by allowing the use of surface-mount manufacturing
techniques.
Input power for 1 dB compression (P1dB): 4 dBm typical
Output third-order intercept (OIP3): 33 dBm typical
2× local oscillator (LO) leakage at RFOUT: 5 dBm typical
2× LO leakage at the intermediate frequency (IF) input:
−35 dBm typical
RF return loss: 15 dB typical
LO return loss: 15 dB typical
32-lead, 5 mm × 5 mm LFCSP package
APPLICATIONS
Point to point and point to multipoint radios
Military radars, electronic warfare (EW), and electronic
intelligence (ELINT)
Satellite communications
Sensors
FUNCTIONAL BLOCK DIAGRAM
32
31
30
29
28
27
26
25
1
2
3
4
5
6
7
8
24
NIC
V
GMIX
NIC
23 NIC
22 V
NIC
NIC
NIC
DRF2
21
20
19
18
17
V
V
V
V
CTL1
CTL2
DRF3
DRF4
HMC7912
GND
LOIN
GND
2×
NIC
9
10
11
12
13
14
15
16
EPAD
Figure 1.
Rev. A
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