Datasheet > HMC788ACPSZ-EP-PT

HMC788ACPSZ-EP-PT

更新时间： 2024-09-27 21:01:27

品牌	Logo	应用领域
亚德诺 - ADI		射频微波
页数	文件大小	规格书
8页	178K
描述
0.01 GHz to 10 GHz, MMIC, GaAs, pHEMT RF Gain Block

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0.01 GHz to 10 GHz, MMIC, GaAs, pHEMT

RF Gain Block

Enhanced Product

HMC788A-EP

FEATURES

FUNCTIONAL BLOCK DIAGRAM

HMC788A-EP

Gain: 14 dB typical

Operational frequency range: 0.01 GHz to 10 GHz

Input/output internally matched to 50 Ω

High input linearity

NIC

OUT

GND

NIC

1 dB compression (P1dB): 20 dBm typical

Output third-order intercept (OIP3): 33 dBm typical

Supply voltage: 5 V typical

PACKAGE

BASE

Figure 1.

2 mm × 2 mm, 6-lead lead frame chip scale package

ENHANCED PRODUCT FEATURES

Supports defense and aerospace applications

(AQEC standard)

Extended industrial temperature range: −55°C to +105°C

Controlled manufacturing baseline

One assembly/test site

One fabrication site

Enhanced product change notification

Qualification data available on request

APPLICATIONS

Cellular, 3G, LTE, WiMAX, and 4G

LO driver applications

Microwave radio

Test and measurement equipment

Ultra wideband (UWB) communications

GENERAL DESCRIPTION

The HMC788A-EP is a 0.01 GHz to 10 GHz, gain block,

monolithic microwave integrated circuit (MMIC) amplifier

using gallium arsenide (GaAs) and pseudomorphic high

electron mobility transistor (pHEMT) technology.

The HMC788A-EP offers 14 dB of gain and an OIP3 of 33 dBm

while requiring only 76 mA from a 5 V supply.

The Darlington feedback pair exhibits reduced sensitivity to

normal process variations and yields excellent gain stability over

temperature while requiring a minimal number of external bias

components.

This 2 mm × 2 mm LFCSP amplifier can be used as either a

cascadable 50 Ω gain stage, or to drive the local oscillator (LO)

port of many of the single and double balanced mixers from

Analog Devices, Inc. with up to 20 dBm output power.

Additional application and technical information can be found

in the HMC788A data sheet.

Rev. 0

Document Feedback

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rightsof third parties that may result fromits use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks andregisteredtrademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

Technical Support

www.analog.com

12 3 4 5 6 7 8

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与HMC788ACPSZ-EP-PT相关器件

型号	品牌	获取价格	描述	数据表
HMC788ACPSZ-EP-R7	ADI	获取价格	0.01 GHz to 10 GHz, MMIC, GaAs, pHEMT RF Gain Block
HMC788ALP2E	HITTITE	获取价格	pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz
HMC788ALP2E	ADI	获取价格	0.01 GHz to 10 GHz, MMIC, GaAs, pHEMT RF Gain Block
HMC788ALP2ETR	ADI	获取价格	0.01 GHz to 10 GHz, MMIC, GaAs, pHEMT RF Gain Block
HMC788LP2E	HITTITE	获取价格	pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz
HMC788LP2ETR	HITTITE	获取价格	Wide Band Low Power Amplifier,
HMC788LP2ETR	ADI	获取价格	RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
HMC789	ADI	获取价格	InGaP HBT有源偏置MMIC放大器，0.7 - 2.8 GHz
HMC7891	ADI	获取价格	HMC7891
HMC789ST89E	HITTITE	获取价格	InGaP HBT GAIN BLOCK MMIC AMPLIFIER, 0.7 - 2.8 GHz

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