17.0 GHz to 20.0 GHz,
GaAs, MMIC, I/Q Upconverter
Data Sheet
HMC7911
FEATURES
GENERAL DESCRIPTION
Conversion gain: 18 dB typical
Sideband rejection: 30 dBc typical
The HMC7911 is a compact gallium arsenide (GaAs), pseudo-
morphic (pHEMT), monolithic microwave integrated circuit
(MMIC) upconverter in a RoHS compliant, low stress, injection
molded plastic LFCSP package that operates from 17 GHz to
20 GHz. This device provides a small signal conversion gain of
18 dB with 30 dBc of sideband rejection. The HMC7911 uses a
variable gain amplifier preceded by an in-phase/quadrature (I/Q)
mixer that is driven by an active 2× local oscillator (LO) multiplier.
IF1 and IF2 mixer inputs are provided, and an external 90° hybrid
is needed to select the required sideband. The I/Q mixer topology
reduces the need for filtering of the unwanted sideband. The
HMC7911 is a much smaller alternative to hybrid style single
sideband (SSB) upconverter assemblies, and it eliminates the
need for wire bonding by allowing the use of surface-mount
manufacturing techniques.
Input power for 1 dB compression (P1dB): 2 dBm typical
Output third-order intercept (OIP3): 33 dBm typical
2× local oscillator (LO) leakage at RFOUT: 10 dBm typical
2× LO leakage at the IF input: −25 dBm typical
RF return loss: 13 dB typical
LO return loss: 10 dB typical
32-lead, 5 mm × 5 mm LFCSP package
APPLICATIONS
Point to point and point to multipoint radios
Military radars, electronic warfare (EW), and electronic
intelligence (ELINT)
Satellite communications
Sensors
FUNCTIONAL BLOCK DIAGRAM
32
31
30
29
28
27
26
25
1
2
3
4
5
6
7
8
24
NIC
V
GMIX
23 NIC
22 V
NIC
NIC
NIC
NIC
DRF2
21
20
19
18
17
V
V
V
V
CTL1
CTL2
DRF3
DRF4
HMC7911
GND
LOIN
GND
2×
NIC
9
10
11
12
13
14
15
16
EPAD
Figure 1.
Rev. B
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