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HMC784AMS8GE

更新时间： 2024-01-10 15:01:13
品牌 Logo 应用领域
亚德诺 - ADI 射频微波
页数 文件大小 规格书
9页 462K
描述
GaAs MMIC 10 Watt T/R Switch DC - 4 GHz

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中文翻译

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HMC784AMS8GE 技术参数

是否无铅： 含铅是否Rohs认证： 符合
生命周期：Active针数：8
Reach Compliance Code：compliant风险等级：2.33
其他特性：CMOS COMPATIBLE特性阻抗：50 Ω
构造：COMPONENT最大输入功率 (CW)：39 dBm
最大插入损耗：1.5 dBJESD-609代码：e3
最大工作频率：4000 MHz最小工作频率：
最高工作温度：85 °C最低工作温度：-40 °C
射频/微波设备类型：DIVERSITY SWITCH端子面层：Tin (Sn)
Base Number Matches：1

HMC784AMS8GE 数据手册

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HMC784AMS8GE  
v01.0117  
GaAs MMIC 10 WATT T/R SWITCH  
DC - 4 GHz  
Typical Applications  
Features  
The HMC784AMS8GE is ideal for:  
• Cellular/4G Infrastructure  
• WiMAX, WiBro & Fixed Wireless  
• Automotive Telematics  
• Mobile Radio  
Input P1dB: +40 dBm @ Vdd = +8V  
High Third Order Intercept: +60 dBm  
Positive Control: +3 to +8 V  
Low Insertion Loss: 0.3 dB  
MSOP8G Package: 14.8 mm2  
• Test Equipment  
General Description  
Functional Diagram  
The HMC784AMS8GE is a high power SPDT switch in  
an 8-lead MSOPG package for use in transmit-rece-  
ive applications which require very low distortion at  
high input signal power levels. The device can con-  
trol signals from DC to 4 GHz. The design provides  
exceptional intermodulation performance; > +60 dBm  
third order intercept at +5V bias. RF1 and RF2 are  
reflective shorts when “OFF”. On-chip circuitry allows  
single positive supply operation from +3 Vdc to +8 Vdc  
at very low DC current with control inputs compatible  
with CMOS logic families.  
Electrical Specifications,  
TA = +25° C, Vctl = 0/Vdd, Vdd = +5V (Unless Otherwise Stated), 50 Ohm System  
Parameter  
Frequency  
Min.  
Typ.  
Max.  
Units  
DC - 1.0 GHz  
DC - 2.0 GHz  
DC - 2.5 GHz  
DC - 3.0 GHz  
DC - 4.0 GHz  
0.3  
0.3  
0.4  
0.4  
0.7  
0.6  
0.8  
0.9  
1.0  
1.5  
dB  
dB  
dB  
dB  
dB  
Insertion Loss  
Isolation  
DC - 4.0 GHz  
24  
28  
dB  
DC - 1.0 GHz  
DC - 2.0 GHz  
DC - 3.0 GHz  
DC - 4.0 GHz  
30  
26  
20  
14  
dB  
dB  
dB  
dB  
Return Loss (On State)  
Vdd = +3V  
Vdd = +5V  
Vdd = +8V  
31  
36  
38  
dBm  
dBm  
dBm  
Input Power for 0.1dB Compression  
Input Power for 1dB Compression  
Input Third Order Intercept  
1.0 - 4.0 GHz  
0.1 - 4.0 GHz  
Vdd = +3V  
Vdd = +5V  
Vdd = +8V  
32  
35  
38  
33  
38  
40  
dBm  
dBm  
dBm  
0.02 - 0.1 GHz  
0.1 - 2.0 GHz  
0.1 - 3.0 GHz  
0.1 - 4.0 GHz  
61  
62  
61  
60  
dBm  
dBm  
dBm  
dBm  
(Two-tone input power = +27 dBm each tone)  
Switching Characteristics  
tRISE, tFALL (10/90% RF)  
tON, tOFF (50% CTL to 10/90% RF)  
82  
112  
ns  
ns  
DC - 4.0 GHz  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registered trademarks are the property of their respective owners.  
For price, delivery, and to place orders: Analog Devices, Inc.,  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106  
Phone: 781-329-4700 • Order online at www.analog.com  
Application Support: Phone: 1-800-ANALOG-D  
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中文翻译

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