Datasheet > HMC753

HMC753

更新时间： 2024-11-10 01:16:43

品牌	Logo	应用领域
亚德诺 - ADI		/
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描述
MMIC Low Noise Amplifier

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HMC753 数据手册

1 GHz to 11 GHz, GaAs, HEMT,

MMIC Low Noise Amplifier

Data Sheet

HMC753

FEATURES

FUNCTIONAL BLOCK DIAGRAM

Noise figure: 1.5 dB at 4 GHz (see Figure 10)

Gain

16.5 dB at 1 GHz to 6 GHz

14 dB at 6 GHz to 11 GHz

Output power for 1 dB compression (P1dB): 18 dBm

at 1 GHz to 6 GHz

Supply voltage (V_DD): 5 V at 55 mA

Output third-order intercept (IP3): 30 dBm at 1 GHz to 6 GHz

50 Ω matched input/output (I/O)

24-lead lead frame chip scale package (LFCSP): 16 mm²

GND

RFIN

GND

RFOUT

GND

HMC753

Figure 1.

APPLICATIONS

Point to point radios

Point to multipoint radios

Military and space

Test instrumentation

GENERAL DESCRIPTION

The HMC753 is a gallium arsenide (GaAs), monolithic

microwave integrated circuit (MMIC), low noise, wideband

amplifier housed in a leadless, 4 mm × 4 mm LFCSP. The amplifier

operates between 1 GHz and 11 GHz, providing up to 16.5 dB

of small signal gain at 1 GHz to 6 GHz, a 1.5 dB noise figure at

4 GHz (see Figure 10), and an output IP3 of 30 dBm at 1 GHz to

6 GHz, while requiring only 55 mA from a 5 V supply.

The P1dB output power of up to 18 dBm at 1 GHz to 6 GHz

enables the low noise amplifier (LNA) to function as a local

oscillator (LO) driver for balanced, I/Q, or image rejection

mixers. The HMC753 also features I/Os that are dc blocked and

internally matched to 50 Ω, making the device ideal for high

capacity microwave radios or very small aperture terminal (VSAT)

applications.

Rev. E

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rightsof third parties that may result fromits use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

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One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

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