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HMC737LP4ETR PDF预览

HMC737LP4ETR

更新时间: 2024-10-28 13:08:23
品牌 Logo 应用领域
HITTITE 电信集成电路电信电路输出元件
页数 文件大小 规格书
6页 208K
描述
Telecom Circuit, 1-Func, PQCC24, ROHS COMPLIANT, PLASTIC, QFN-24

HMC737LP4ETR 技术参数

生命周期:Transferred包装说明:HVQCCN,
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.62JESD-30 代码:S-PQCC-N24
长度:4 mm功能数量:1
端子数量:24最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:HVQCCN封装形状:SQUARE
封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE座面最大高度:1 mm
标称供电电压:4.2 V表面贴装:YES
电信集成电路类型:TELECOM CIRCUIT温度等级:INDUSTRIAL
端子形式:NO LEAD端子节距:0.5 mm
端子位置:QUAD宽度:4 mm
Base Number Matches:1

HMC737LP4ETR 数据手册

 浏览型号HMC737LP4ETR的Datasheet PDF文件第2页浏览型号HMC737LP4ETR的Datasheet PDF文件第3页浏览型号HMC737LP4ETR的Datasheet PDF文件第4页浏览型号HMC737LP4ETR的Datasheet PDF文件第5页浏览型号HMC737LP4ETR的Datasheet PDF文件第6页 
HMC737LP4 / 737LP4E  
v00.1108  
MMIC VCO w/ HALF FREQUENCY OUTPUT  
14.9 - 15.5 GHz  
Typical Applications  
The HMC737LP4(E) is ideal for:  
• Point to Point/Multipoint Radio  
• Test Equipment & Industrial Controls  
• SATCOM  
Features  
Dual Output: Fo = 14.9 - 15.5 GHz  
Fo/2 = 7.45 - 7.75 GHz  
Pout: +9 dBm  
Phase Noise: -105 dBc/Hz @ 100 kHz  
No External Resonator Needed  
24 Lead 4x4mm SMT Package: 16mm2  
• Military End-Use  
Functional Diagram  
General Description  
The HMC737LP4(E) is a GaAs InGaP Heterojunction  
Bipolar Transistor (HBT) MMIC VCO. The  
HMC737LP4(E) integrate  
a
resonator, negative  
resistance device, varactor diode and feature half  
frequencyoutput. TheVCO’sphasenoiseperformance  
is excellent over temperature, shock, and process due  
to the oscillator’s monolithic structure. Power output  
is +9 dBm typical from a +4.2V supply voltage. The  
voltage controlled oscillator is packaged in a leadless  
QFN 4x4 mm surface mount package, and requires no  
external matching components.  
12  
Electrical Specifications, TA = +25° C, Vcc = +4.2V  
Parameter  
Min.  
Typ.  
Max.  
Units  
Fo  
Fo/2  
14.9 - 15.5  
7.45 - 7.75  
GHz  
GHz  
Frequency Range  
RFOUT  
RFOUT/2  
6
-8  
9
-3  
13  
2
dBm  
dBm  
Power Output  
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RFOUT  
Tune Voltage  
-105  
150  
2.5  
dBc/Hz  
V
Vtune  
1
13  
180  
10  
Supply Current  
120  
mA  
µA  
Tune Port Leakage Current (Vtune= 13V)  
Output Return Loss  
dB  
Harmonics/Subharmonics  
1/2  
3/2  
-45  
-42  
dBc  
dBc  
Pulling (into a 2.0:1 VSWR)  
Pushing @ Vtune= 5V  
Frequency Drift Rate  
12  
24  
MHz pp  
MHz/V  
MHz/°C  
1.2  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
12 - 226  

HMC737LP4ETR 替代型号

型号 品牌 替代类型 描述 数据表
HMC737LP4E HITTITE

类似代替

MMIC VCO w/ HALF FREQUENCY OUTPUT 14.9 - 15.5 GHz

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