HMC717ALP3E
v09.0816
Gaas pHEMT MMIC LOW NOIsE
aMpLIFIER, 4.8 - 6.0 GHz
Feꢀtureꢁ
Tyꢂicꢀl aꢂꢂlicꢀtionꢁ
The HMC717ALP3E is ideal for:
• Fixed Wireless and LTE/WiMAX/4G
• BTS & Infrastructure
Noise Figure: 1.1 dB
Gain: 14.5 dB
Output IP3: +29.5 dBm
Single Supply: +3V to +5V
16 Lead 3x3mm QFN Package: 9 mm2
• Repeaters and Femtocells
• Public Safety Radio
• Access Points
Functionꢀl Diꢀgrꢀm
Generꢀl Deꢁcriꢂtion
The HMC717ALP3E is
a GaAs PHEMT MMIC
Low Noise Amplifier that is ideal for fixed wireless
and LTE/WiMAX/4G basestation front-end receivers
operating between 4.8 and 6.0 GHz. The amplifier
has been optimized to provide 1.1 dB noise figure,
14.5 dB gain and +29.5 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC717ALP3E can be biased with +3V to +5V and
features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application.
Electricꢀl sꢂecificꢀtionꢁ
Ta = +25° C, Rbiꢀꢁ = 825 Ohmꢁ for Vdd = 5V, Rbiꢀꢁ = 5.76k Ohmꢁ for Vdd = 3V[1] [2]
Vdd = +3V
Typ.
4.8 - 6.0
12.5
0.005
1.3
Vdd = +5V
Typ.
4.8 - 6.0
14.5
0.01
1.3
Parameter
Units
Min.
Max.
Min.
11.0
Max.
Frequency Range
Gain
GHz
dB
Gain Variation Over Temperature
Noise Figure
dB/ °C
dB
1.8
Input Return Loss
8
9
dB
Output Return Loss
13
15
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Total Supply Current (Idd)
12
18
dBm
dBm
dBm
mA
14.5
23.5
31
19
29.5
68
100
[1] Rbias resistor sets current, see application circuit herein
[2] Vdd = Vdd1 = Vdd2
.
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