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HMC717LP3ERTR PDF预览

HMC717LP3ERTR

更新时间: 2024-11-29 21:19:55
品牌 Logo 应用领域
亚德诺 - ADI 放大器
页数 文件大小 规格书
10页 363K
描述
IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,GAAS,LLCC,16PIN,PLASTIC

HMC717LP3ERTR 数据手册

 浏览型号HMC717LP3ERTR的Datasheet PDF文件第2页浏览型号HMC717LP3ERTR的Datasheet PDF文件第3页浏览型号HMC717LP3ERTR的Datasheet PDF文件第4页浏览型号HMC717LP3ERTR的Datasheet PDF文件第5页浏览型号HMC717LP3ERTR的Datasheet PDF文件第6页浏览型号HMC717LP3ERTR的Datasheet PDF文件第7页 
HMC717LP3 / 717LP3E  
v01.1008  
GaAs PHEMT MMIC LOW NOISE  
AMPLIFIER, 4.8 - 6.0 GHz  
5
Features  
Typical Applications  
The HMC717LP3(E) is ideal for:  
• Fixed Wireless and LTE/WiMAX/4G  
• BTS & Infrastructure  
Noise Figure: 1.1 dB  
Gain: 16.5 dB  
Output IP3: +31.5 dBm  
Single Supply: +3V to +5V  
16 Lead 3x3mm QFN Package: 9 mm2  
• Repeaters and Femtocells  
• Public Safety Radio  
• Access Points  
Functional Diagram  
General Description  
The HMC717LP3(E) is a GaAs PHEMT MMIC  
Low Noise Amplifier that is ideal for fixed wireless  
and LTE/WiMAX/4G basestation front-end receivers  
operating between 4.8 and 6.0 GHz. The amplifier  
has been optimized to provide 1.1 dB noise figure,  
16.5 dB gain and +31.5 dBm output IP3 from a single  
supply of +5V. Input and output return losses are  
excellent and the LNA requires minimal external  
matching and bias decoupling components. The  
HMC717LP3(E) can be biased with +3V to +5V and  
features an externally adjustable supply current  
which allows the designer to tailor the linearity  
performance of the LNA for each application.  
Electrical Specifications  
TA = +25° C, Rbias = 2k Ohms for Vdd = 5V, Rbias = 20k Ohms for Vdd = 3V[1] [2]  
Vdd = +3V  
Typ.  
4.8 - 6.0  
14.3  
0.01  
1.25  
13  
Vdd = +5V  
Typ.  
4.8 - 6.0  
16.5  
0.01  
1.1  
Parameter  
Units  
Min.  
12  
Max.  
Min.  
13.5  
Max.  
1.4  
Frequency Range  
Gain  
MHz  
dB  
Gain Variation Over Temperature  
Noise Figure  
dB/ °C  
dB  
1.5  
Input Return Loss  
13  
dB  
Output Return Loss  
13  
18  
dB  
Output Power for 1 dB Compression (P1dB)  
Saturated Output Power (Psat)  
Output Third Order Intercept (IP3)  
Total Supply Current (Idd)  
12  
14  
15  
18.5  
19.5  
31.5  
73  
dBm  
dBm  
dBm  
mA  
15  
25.5  
31  
40  
100  
[1] Rbias resistor sets current, see application circuit herein  
[2] Vdd = Vdd1 = Vdd2  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
5 - 324  

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