HMC717LP3 / 717LP3E
v01.1008
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
5
Features
Typical Applications
The HMC717LP3(E) is ideal for:
• Fixed Wireless and LTE/WiMAX/4G
• BTS & Infrastructure
Noise Figure: 1.1 dB
Gain: 16.5 dB
Output IP3: +31.5 dBm
Single Supply: +3V to +5V
16 Lead 3x3mm QFN Package: 9 mm2
• Repeaters and Femtocells
• Public Safety Radio
• Access Points
Functional Diagram
General Description
The HMC717LP3(E) is a GaAs PHEMT MMIC
Low Noise Amplifier that is ideal for fixed wireless
and LTE/WiMAX/4G basestation front-end receivers
operating between 4.8 and 6.0 GHz. The amplifier
has been optimized to provide 1.1 dB noise figure,
16.5 dB gain and +31.5 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC717LP3(E) can be biased with +3V to +5V and
features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application.
Electrical Specifications
TA = +25° C, Rbias = 2k Ohms for Vdd = 5V, Rbias = 20k Ohms for Vdd = 3V[1] [2]
Vdd = +3V
Typ.
4.8 - 6.0
14.3
0.01
1.25
13
Vdd = +5V
Typ.
4.8 - 6.0
16.5
0.01
1.1
Parameter
Units
Min.
12
Max.
Min.
13.5
Max.
1.4
Frequency Range
Gain
MHz
dB
Gain Variation Over Temperature
Noise Figure
dB/ °C
dB
1.5
Input Return Loss
13
dB
Output Return Loss
13
18
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Total Supply Current (Idd)
12
14
15
18.5
19.5
31.5
73
dBm
dBm
dBm
mA
15
25.5
31
40
100
[1] Rbias resistor sets current, see application circuit herein
[2] Vdd = Vdd1 = Vdd2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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