Datasheet > HMC717LP3TR

HMC717LP3TR

更新时间： 2024-02-24 05:55:18

品牌	Logo	应用领域
亚德诺 - ADI		放大器射频微波功率放大器
页数	文件大小	规格书
10页	1091K
描述
RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

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中文翻译

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技术参数
数据手册

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HMC717LP3TR 技术参数

是否Rohs认证：	不符合	生命周期：	End Of Life
Reach Compliance Code：	not_compliant	风险等级：	5.76
安装特点：	SURFACE MOUNT	功能数量：	1
端子数量：	16	最高工作温度：	85 °C
最低工作温度：	-40 °C	封装主体材料：	PLASTIC/EPOXY
封装等效代码：	LCC16,.12SQ,20	电源：	3/5 V
射频/微波设备类型：	WIDE BAND LOW POWER	子类别：	RF/Microwave Amplifiers
最大压摆率：	100 mA	表面贴装：	YES
技术：	GAAS	Base Number Matches：	1

HMC717LP3TR 数据手册

HMC717LP3 / 717LP3E

v03.1112

GaAs PHEMT MMIC LOW NOISE

AMPLIFIER, 4.8 - 6.0 GHz

Features

Typical Applications

The HMC717LP3(E) is ideal for:

• Fixed Wireless and LTE/WiMAX/4G

• BTS & Infrastructure

Noise Figure: 1.1 dB

Gain: 16.5 dB

Output IP3: +31.5 dBm

Single Supply: +3V to +5V

16 Lead 3x3mm QFN Package: 9 mm²

• Repeaters and Femtocells

• Public Safety Radio

• Access Points

Functional Diagram

General Description

The HMC717LP3(E) is a GaAs PHEMT MMIC

Low Noise Ampliﬁer that is ideal for ﬁxed wireless

and LTE/WiMAX/4G basestation front-end receivers

operating between 4.8 and 6.0 GHz. The ampliﬁer

has been optimized to provide 1.1 dB noise ﬁgure,

16.5 dB gain and +31.5 dBm output IP3 from a single

supply of +5V. Input and output return losses are

excellent and the LNA requires minimal external

matching and bias decoupling components. The

HMC717LP3(E) can be biased with +3V to +5V and

features an externally adjustable supply current

which allows the designer to tailor the linearity

performance of the LNA for each application.

Electrical Speciﬁcations

T_A= +25° C, Rbias = 2k Ohms for Vdd = 5V, Rbias = 20k Ohms for Vdd = 3V^{[1] [2]}

Vdd = +3V

Typ.

4.8 - 6.0

14.3

0.01

1.25

Vdd = +5V

Typ.

4.8 - 6.0

16.5

0.01

1.1

Parameter

Units

Min.

Max.

Min.

13.5

Max.

1.4

Frequency Range

GHz

Gain

Gain Variation Over Temperature

Noise Figure

dB/ °C

1.5

Input Return Loss

Output Return Loss

Output Power for 1 dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Total Supply Current (Idd)

18.5

19.5

31.5

dBm

25.5

27^[3]

100

[1] Rbias resistor sets current, see application circuit herein

[2] Vdd = Vdd1 = Vdd2

[3] Guaranteed by Design at 5GHz.

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824

Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

12 3 4 5 6 7...10

中文翻译

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