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HMC597LP4ETR PDF预览

HMC597LP4ETR

更新时间: 2024-11-18 13:08:23
品牌 Logo 应用领域
HITTITE 射频调制器射频解调器微波调制器微波解调器射频和微波
页数 文件大小 规格书
8页 264K
描述
Demodulator

HMC597LP4ETR 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:compliant风险等级:5.62
射频/微波设备类型:DEMODULATORBase Number Matches:1

HMC597LP4ETR 数据手册

 浏览型号HMC597LP4ETR的Datasheet PDF文件第2页浏览型号HMC597LP4ETR的Datasheet PDF文件第3页浏览型号HMC597LP4ETR的Datasheet PDF文件第4页浏览型号HMC597LP4ETR的Datasheet PDF文件第5页浏览型号HMC597LP4ETR的Datasheet PDF文件第6页浏览型号HMC597LP4ETR的Datasheet PDF文件第7页 
HMC597LP4 / 597LP4E  
v03.0907  
SiGe WIDEBAND DIRECT  
DEMODULATOR RFIC, 100 - 4000 MHz  
Typical Applications  
Features  
The HMC597LP4 / HMC597LP4E is suitable for  
various modulation systems:  
High Linearity: +25 dBm IIP3 & +60 dBm IIP2  
Low Noise Figure: 15 dB  
• Cellular/PCS/3G  
High Integration: On-Chip RF Balun  
• Base Stations & Repeaters  
• GSM/GPRS, WCDMA & TD-SCDMA  
• WiMAX, WiBro & Fixed Wireless  
General Description  
The HMC597LP4(E) are highly integrated SiGe  
wideband direct conversion I/Q Demodulator RFICs  
which are ideal for high dynamic range receivers  
operating from 100 - 4000 MHz in cellular and  
broadband wireless infrastructure applications.  
Providing a very high level of integration compared  
with discrete solutions, the HMC597LP4(E) features an  
on-chip RF balun which allows for singled ended RF  
input. An off-chip capacitor allows the reconfiguration  
of the RF port to operate over the whole 100 - 4000  
MHz band without additional off-chip components.  
Also ideal for software radio and other multi-band  
receivers, the HMC597LP4(E) demodulator is housed  
in a compact 4 x 4 mm SMT QFN package and delivers  
exceptionally high dynamic range. The LO requires -6  
to +6 dBm and can be driven in single-ended mode.  
The I and Q output ports are differential with an output  
impedance of 400 Ohms, allowing direct connection to  
channel filters and ADCs. This device is optimized for  
a supply voltage of +4.5V to +5.5V and consumes 200  
mA @ +5V supply.  
Functional Diagram  
10  
Electrical Specifications, See Test Conditions on following page herein.  
Parameter  
Min.  
Typ.  
0.1 - 4.0  
12  
Max.  
Units  
GHz  
dBm  
dB  
RF Input Frequency (Direct LO)  
Input P1dB  
SSB Noise Figure  
Input IP3  
15  
+25  
dBm  
dBm  
dB  
Input IP2  
+60  
Conversion Gain  
-3.5  
LO to RF Leakage @ +3 dBm LO  
IF Port Bandwidth  
IF Output Impedance (Diff.)  
LO Input Power  
-66  
dBm  
MHz  
Ohms  
dBm  
dB  
600  
400  
-6 to +6  
12/12  
200  
LO/RF Return Loss  
Total Supply Current  
230  
mA  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
10 - 2  

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