HMC519

更新时间： 2024-02-02 23:21:54

品牌	Logo	应用领域
HITTITE		射频和微波射频放大器微波放大器
页数	文件大小	规格书
6页	337K
描述
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 18 - 32 GHz

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HMC519 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Transferred	包装说明：	DIE OR CHIP
Reach Compliance Code：	compliant	ECCN代码：	3A001.B.2.D
风险等级：	5.67	Is Samacsys：	N
其他特性：	LOW NOISE	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	11 dB
最大输入功率 (CW)：	8 dBm	JESD-609代码：	e4
功能数量：	1	最大工作频率：	32000 MHz
最小工作频率：	18000 MHz	最高工作温度：	85 °C
最低工作温度：	-55 °C	封装等效代码：	DIE OR CHIP
电源：	3 V	射频/微波设备类型：	WIDE BAND LOW POWER
子类别：	RF/Microwave Amplifiers	最大压摆率：	65 mA
技术：	GAAS	端子面层：	Gold (Au)
Base Number Matches：	1

HMC519 数据手册

HMC519

v00.0904

GaAs PHEMT MMIC LOW NOISE

AMPLIFIER, 18 - 32 GHz

Mounting & Bonding Techniques for Millimeterwave GaAs MMICs

The die should be attached directly to the ground plane eutectically or

0.102mm (0.004”) Thick GaAs MMIC

with conductive epoxy (see HMC general Handling, Mounting, Bonding

Note).

3 mil Ribbon Bond

50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina

thin ﬁlm substrates are recommended for bringing RF to and from the chip

(Figure 1). If 0.254mm (10 mil) thick alumina thin ﬁlm substrates must be

used, the die should be raised 0.150mm (6 mils) so that the surface of

the die is coplanar with the surface of the substrate. One way to accom-

plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)

thick molybdenum heat spreader (moly-tab) which is then attached to the

ground plane (Figure 2).

0.076mm

(0.003”)

RF Ground Plane

Microstrip substrates should brought as close to the die as possible in order

to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm

to0.152mm(3to6mils). Goldribbonof0.075mm(3mils)widthandminimum

< 0.31 mm (<12 mils) is recommended.

0.127mm (0.005”) Thick Alumina

Thin Film Substrate

Figure 1.

Handling Precautions

Follow these precautions to avoid permanent damage.

0.102mm (0.004”) Thick GaAs MMIC

3 mil Ribbon Bond

Storage: All bare die are placed in either Wafﬂe or Gel based ESD

protective containers, and then sealed in an ESD protective bag for

shipment. Once the sealed ESD protective bag has been opened, all die

should be stored in a dry nitrogen environment.

0.076mm

(0.003”)

Cleanliness: Handle the chips in a clean environment. DO NOT attempt

to clean the chip using liquid cleaning systems.

RF Ground Plane

Static Sensitivity: Follow ESD precautions to protect against > 250V

ESD strikes.

0.150mm (0.005”) Thick

Moly Tab

0.254mm (0.010”) Thick Alumina

Thin Film Substrate

Transients: Suppress instrument and bias supply transients while bias is

applied. Use shielded signal and bias cables to minimize inductive pick-

Figure 2.

up.

General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The

surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ﬁngers.

Mounting

The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.

The mounting surface should be clean and ﬂat.

Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a

tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290

deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than

3 seconds of scrubbing should be required for attachment.

Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy ﬁllet is observed

around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.

Wire Bonding

RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded

with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended.

Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made

with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve

reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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与HMC519相关器件

型号	品牌	获取价格	描述	数据表
HMC519_09	HITTITE	获取价格	GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 18 - 32 GHz
HMC519-Die	ADI	获取价格	GaAs pHEMT MMIC低噪声放大器芯片，18 - 32 GHz
HMC519LC4	HITTITE	获取价格	GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 18 - 31 GHz
HMC519LC4	ADI	获取价格	HMC519LC4
HMC519LC4TR	HITTITE	获取价格	暂无描述
HMC519LC4TR	ADI	获取价格	HMC519LC4TR
HMC520	HITTITE	获取价格	GaAs MMIC I/Q MIXER 6 - 10 GHz
HMC520_10	HITTITE	获取价格	GaAs MMIC I/Q MIXER 6 - 10 GHz
HMC520A	ADI	获取价格	Radio frequency (RF) range: 6 GHz to 10 GHz
HMC520ALC4	ADI	获取价格	Radio frequency (RF) range: 6 GHz to 10 GHz

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