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HMC520ALC4 PDF预览

HMC520ALC4

更新时间: 2024-01-17 22:11:45
品牌 Logo 应用领域
亚德诺 - ADI /
页数 文件大小 规格书
28页 423K
描述
Radio frequency (RF) range: 6 GHz to 10 GHz

HMC520ALC4 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active针数:24
Reach Compliance Code:compliant风险等级:2
特性阻抗:50 Ω构造:COMPONENT
最大变频损耗:10 dB最大输入功率 (CW):20 dBm
JESD-609代码:e4安装特点:SURFACE MOUNT
端子数量:24最大工作频率:10000 MHz
最小工作频率:6000 MHz最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:CERAMIC
封装等效代码:LCC24,.16SQ,20射频/微波设备类型:IMAGE REJECTION
表面贴装:YES技术:GAAS
端子面层:Gold (Au)Base Number Matches:1

HMC520ALC4 数据手册

 浏览型号HMC520ALC4的Datasheet PDF文件第2页浏览型号HMC520ALC4的Datasheet PDF文件第3页浏览型号HMC520ALC4的Datasheet PDF文件第4页浏览型号HMC520ALC4的Datasheet PDF文件第5页浏览型号HMC520ALC4的Datasheet PDF文件第6页浏览型号HMC520ALC4的Datasheet PDF文件第7页 
6 GHz to 10 GHz,  
GaAs, MMIC, I/Q Mixer  
Data Sheet  
HMC520A  
FEATURES  
FUNCTIONAL BLOCK DIAGRAM  
Radio frequency (RF) range: 6 GHz to 10 GHz  
Local oscillator (LO) input frequency range: 6 GHz to 10 GHz  
Conversion loss: 8 dB typical at 6 GHz to 10 GHz  
Image rejection: 23 dBc typical at 6 GHz to 10 GHz  
LO to RF isolation: 43 dB typical  
LO to intermediate frequency (IF) isolation: 25 dB typical  
Input third-order intercept (IP3): 19 dBm typical  
Input power for 1 dB compression (P1dB): 10 dBm typical at  
7.1 GHz to 8.5 GHz  
HMC520A  
NIC 1  
NIC 2  
18 NIC  
17 NIC  
90° HYBRID  
GND 3  
GND  
LO  
16  
15  
4
RF  
GND 5  
14 GND  
13 NIC  
6
NIC  
PACKAGE  
BASE  
Wide IF frequency range: DC to 3.5 GHz  
GND  
24-terminal, 4 mm × 4 mm, ceramic leadless chip carrier  
Figure 1.  
APPLICATIONS  
Point to point microwave radios  
Point to multipoint radios  
Video satellites (VSATs)  
Digital radios  
Instrumentation  
Automatic test equipment (ATE)  
GENERAL DESCRIPTION  
The HMC520A is a compact gallium arsenide (GaAs),  
monolithic microwave integrated circuit (MMIC), in-phase  
quadrature (I/Q) mixer in a 24-terminal, RoHS compliant,  
ceramic leadless chip carrier (LCC) package. The device can  
be used as either an image reject mixer or a single sideband  
upconverter. The mixer uses two standard double balanced  
mixer cells and a 90° hybrid fabricated in a GaAs, metal  
semiconductor field effect transistor (MESFET) process. The  
HMC520A is a much smaller alternative to a hybrid style image  
reject mixer and a single sideband upconverter assembly. The  
HMC520A eliminates the need for wire bonding, allowing the  
use of surface-mount manufacturing techniques.  
Rev. 0  
Document Feedback  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registeredtrademarks arethe property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700  
Technical Support  
©2017 Analog Devices, Inc. All rights reserved.  
www.analog.com  
 
 
 
 

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