HMC511LP5/511LP5E
v06.0114
MMIC VCO WITH HALF FREQUENCY OUTPUT
9.05 - 10.15 GHz
Typical Applications
Features
Low noise MMIC VCO w/Half Frequency, for:
Dual Output: Fo = 9.05 - 10.15 GHz
Fo/2 = 4.525 - 5.075 GHz
• VSAT Radio
Pout: +13 dBm
• Point to Point/Multi-Point Radio
• Test Equipment & Industrial Controls
• Military End-Use
Phase Noise: -115 dBc/Hz @100 kHz Typ.
No External Resonator Needed
32 Lead 5x5mm SMT Package: 25mm²
Functional Diagram
General Description
The HMC511LP5 & HMC511LP5E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC VCOs.
TheHMC511LP5&HMC511LP5Eintegrateresonators,
negative resistance devices, varactor diodes and
feature a half frequency output. The VCO’s phase
noise performance is excellent over temperature,
shock, and process due to the oscillator’s monolithic
structure. Power output is +13 dBm typical from a +5V
supply. The voltage controlled oscillator is packaged
in a leadless QFN 5x5 mm surface mount package,
and requires no external matching components.
Electrical Specifications, TA = +25° C, Vcc = +5V
Parameter
Min.
Typ.
Max.
Units
Fo
Fo/2
9.05 - 10.15
4.525 - 5.075
GHz
GHz
Frequency Range
RFOUT
RFOUT/2
+9
+5
+16
+11
dBm
dBm
Power Output
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RFOUT
Tune Voltage
-115
265
2
dBc/Hz
V
Vtune
2
13
300
10
Supply Current (Icc) (Vcc = +5.0V)
Tune Port Leakage Current (Vtune= 13V)
Output Return Loss
200
mA
µA
dB
Harmonics/Subharmonics
1/2
2nd
3rd
38
15
30
dBc
dBc
dBc
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= 5V
Frequency Drift Rate
8
MHz pp
MHz/V
MHz/°C
15
0.9
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
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resFpoonrsibpilirtyicisea,ssdumeeldivbey ArynalaognDdevticoespfolar itcseuseo, rndoreforrsa:nyHinifrtitnigteemeMntsicofrpoawtenatsvoer oCtheorrporation, 2 Elizabeth Drive, Chelmsford, MA 01824
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343
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