HMC327MS8G / 327MS8GE
v06.1209
GaAs InGaP HBT MMIC
1/2 WATT POWER AMPLIFIER, 3 - 4 GHz
Typical Applications
Features
The HMC327MS8G(E) is ideal for:
• Wireless Local Loop
High Gain: 21 dB
Saturated Power: +30 dBm @ 45% PAE
Output P1dB: +27 dBm
• WiMAX & Fixed Wireless
• Access Points
Single Supply: +5V
• Subscriber Equipment
Power Down Capability
11
Low External Part Count
Compact MSOP Package: 14.8 mm2
Functional Diagram
General Description
The HMC327MS8G(E) is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT) MMIC
power amplifier which operates between 3 and 4 GHz.
The amplifier is packaged in a low cost, surface mo-
unt 8 leaded package with an exposed base for
improved RF and thermal performance. With a mini-
mum of external components, the amplifier provides
21 dB of gain, +30 dBm of saturated power at 45%
PAE from a single +5V supply. Power down capability
is available to conserve current consumption when the
amplifier is not in use.
Electrical Specifications, TA = +25 °C, Vs = 5V, Vctl = 5V
Parameter
Min.
17
Typ.
Max.
Units
GHz
dB
Frequency Range
3 - 4
Gain
21
24
Gain Variation Over Temperature
Input Return Loss
0.025
0.035
dB / °C
dB
15
Output Return Loss
8
dB
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
24
36
27
dBm
dBm
dBm
dB
30
40
5
Supply Current (Icq)
Vctl* = 0V/5V
Vctl* = 5V
0.002 / 250
mA
Control Current (Ipd)
7
mA
Switching Speed
tON, tOFF
40
ns
*See Application Circuit for proper biasing configuration.
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