Datasheet > HMC327MS8GETR

HMC327MS8GETR

更新时间： 2024-11-09 21:17:55

品牌	Logo	应用领域
HITTITE		射频微波
页数	文件大小	规格书
6页	209K
描述
Wide Band Medium Power Amplifier,

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中文翻译

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技术参数
数据手册
替代型号

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HMC327MS8GETR 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.64	射频/微波设备类型：	WIDE BAND MEDIUM POWER
Base Number Matches：	1

HMC327MS8GETR 数据手册

HMC327MS8G / 327MS8GE

v06.1209

GaAs InGaP HBT MMIC

1/2 WATT POWER AMPLIFIER, 3 - 4 GHz

Typical Applications

Features

The HMC327MS8G(E) is ideal for:

• Wireless Local Loop

High Gain: 21 dB

Saturated Power: +30 dBm @ 45% PAE

Output P1dB: +27 dBm

• WiMAX & Fixed Wireless

• Access Points

Single Supply: +5V

• Subscriber Equipment

Power Down Capability

Low External Part Count

Compact MSOP Package: 14.8 mm²

Functional Diagram

General Description

The HMC327MS8G(E) is a high efficiency GaAs

InGaP Heterojunction Bipolar Transistor (HBT) MMIC

power ampliﬁer which operates between 3 and 4 GHz.

The ampliﬁer is packaged in a low cost, surface mo-

unt 8 leaded package with an exposed base for

improved RF and thermal performance. With a mini-

mum of external components, the ampliﬁer provides

21 dB of gain, +30 dBm of saturated power at 45%

PAE from a single +5V supply. Power down capability

is available to conserve current consumption when the

ampliﬁer is not in use.

Electrical Speciﬁcations, T_A= +25 °C, Vs = 5V, Vctl = 5V

Parameter

Min.

Typ.

Max.

Units

GHz

Frequency Range

3 - 4

Gain

Gain Variation Over Temperature

Input Return Loss

0.025

0.035

dB / °C

Output Return Loss

Output Power for 1dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Noise Figure

dBm

Supply Current (Icq)

Vctl* = 0V/5V

Vctl* = 5V

0.002 / 250

Control Current (Ipd)

Switching Speed

tON, tOFF

*See Application Circuit for proper biasing conﬁguration.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

11 - 2

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中文翻译

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HMC327MS8GETR 替代型号

型号	品牌	替代类型	描述	数据表
HMC327MS8GTR	HITTITE	类似代替	Wide Band Medium Power Amplifier,
HMC327MS8GTR	ADI	类似代替	MMIC Power Amplifier SMT, 3 - 4 GHz
HMC327MS8GE	HITTITE	类似代替	GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz

与HMC327MS8GETR相关器件

型号	品牌	获取价格	描述	数据表
HMC327MS8GTR	ADI	获取价格	MMIC Power Amplifier SMT, 3 - 4 GHz
HMC327MS8GTR	HITTITE	获取价格	Wide Band Medium Power Amplifier,
HMC329	HITTITE	获取价格	GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz
HMC329_07	HITTITE	获取价格	GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz
HMC329_09	HITTITE	获取价格	GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz
HMC329A	ADI	获取价格	HMC329A
HMC329A-Die	ADI	获取价格	22 GHz 至 38 GHz GaAs MMIC 双平衡混频器
HMC329ALC3B	ADI	获取价格	HMC329ALC3B
HMC329ALC3BTR	ADI	获取价格	24 GHz to 32 GHz, GaAs, MMIC, Double Balanced Mixer
HMC329ALC3BTR-R5	ADI	获取价格	24 GHz to 32 GHz, GaAs, MMIC, Double Balanced Mixer

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