Datasheet > HMC327MS8GETR

HMC327MS8GETR

更新时间： 2024-11-09 14:51:03

品牌	Logo	应用领域
亚德诺 - ADI		射频微波
页数	文件大小	规格书
7页	360K
描述
MMIC Power Amplifier SMT, 3 - 4 GHz

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

HMC327MS8GETR 数据手册

HMC327MS8G / 327MS8GE

v06.1209

GaAs InGaP HBT MMIC

1/2 WATT POWER AMPLIFIER, 3 - 4 GHz

Typical Applications

Features

The HMC327MS8G(E) is ideal for:

• Wireless Local Loop

High Gain: 21 dB

Saturated Power: +30 dBm @ 45% PAE

Output P1dB: +27 dBm

• WiMAX & Fixed Wireless

• Access Points

Single Supply: +5V

• Subscriber Equipment

Power Down Capability

Low External Part Count

Compact MSOP Package: 14.8 mm²

Functional Diagram

General Description

The HMC327MS8G(E) is a high efficiency GaAs

InGaP Heterojunction Bipolar Transistor (HBT) MMIC

power ampliﬁer which operates between 3 and 4 GHz.

The ampliﬁer is packaged in a low cost, surface mo-

unt 8 leaded package with an exposed base for

improved RF and thermal performance. With a mini-

mum of external components, the ampliﬁer provides

21 dB of gain, +30 dBm of saturated power at 45%

PAE from a single +5V supply. Power down capability

is available to conserve current consumption when the

ampliﬁer is not in use.

Electrical Speciﬁcations, T_A= +25 °C, Vs = 5V, Vctl = 5V

Parameter

Min.

Typ.

Max.

Units

GHz

Frequency Range

3 - 4

Gain

Gain Variation Over Temperature

Input Return Loss

0.025

0.035

dB / °C

Output Return Loss

Output Power for 1dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Noise Figure

dBm

Supply Current (Icq)

Vctl* = 0V/5V

Vctl* = 5V

0.002 / 250

Control Current (Ipd)

Switching Speed

tON, tOFF

*See Application Circuit for proper biasing conﬁguration.

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

For price, delivery, and to place orders: Analog Devices, Inc.,

_{responsibility is ass}F_umo_er_{d b}p_yr_Ai_nc_ae_log, _Dd_ee_vicl_eiv_se_forr_iy_ts,_ua_sen_{, n}d_ort_foo_{r a}p_nyla_infc_rine_geo_mer_nd_tse_or_fs_pa,_tep_ntl_se_oa_{r o}s_the_ercontact Hittite Microwave Corporation:

^{rights of third parties th}2^at0^maA^{y r}l^ep^suh^lta^fromRⁱo^tsa^usd^e.,^SC^peh^cife^icalm^tions^sf^so^ubr^jd^ec,^{t t}M^{o c}A^han0^ge1^w8^it2^ho4^{ut no}P^tich^eo^{. N}n^oe: _P^O9_hⁿ7_o^e8_n^T_e-^e_:2^c₇5^h₈ⁿ0₁^o_--₃^l3^o₂^g3₉^y_-4₄^W3₇^a₀^y₀F^,_•^Pa^._O^Ox_r:^._d^B9_e^o_r7^x_o8_n⁹-_l¹_i2_n⁰_e5^6,_a0^N_t-_w^o3^r_w^w3_w7^oo_.3_a^d_n^,_a^M_lo^A_g.⁰_c²_o⁰_m^62-9106

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

11 - 2

Application Support: Phone: 1-800-ANALOG-D

Trademarks and registered trademarks are the property of their respective owners.

Order On-line at www.hittite.com

12 3 4 5 6 7

中文翻译

下载PDF

HMC327MS8GETR 替代型号

型号	品牌	替代类型	描述	数据表
HMC327MS8GE	ADI	完全替代	MMIC Power Amplifier SMT, 3 - 4 GHz
HMC327MS8G	ADI	完全替代	MMIC Power Amplifier SMT, 3 - 4 GHz

与HMC327MS8GETR相关器件

型号	品牌	获取价格	描述	数据表
HMC327MS8GTR	ADI	获取价格	MMIC Power Amplifier SMT, 3 - 4 GHz
HMC327MS8GTR	HITTITE	获取价格	Wide Band Medium Power Amplifier,
HMC329	HITTITE	获取价格	GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz
HMC329_07	HITTITE	获取价格	GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz
HMC329_09	HITTITE	获取价格	GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz
HMC329A	ADI	获取价格	HMC329A
HMC329A-Die	ADI	获取价格	22 GHz 至 38 GHz GaAs MMIC 双平衡混频器
HMC329ALC3B	ADI	获取价格	HMC329ALC3B
HMC329ALC3BTR	ADI	获取价格	24 GHz to 32 GHz, GaAs, MMIC, Double Balanced Mixer
HMC329ALC3BTR-R5	ADI	获取价格	24 GHz to 32 GHz, GaAs, MMIC, Double Balanced Mixer

与HMC327MS8GETR相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

22
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

21
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

48
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

39

产品中心

服务支持

精选活动

关于我们

帮助中心

HMC327MS8GETR

HMC327MS8GETR 数据手册

HMC327MS8GETR 替代型号

与HMC327MS8GETR相关器件

与HMC327MS8GETR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HMC327MS8GETR

HMC327MS8GETR 数据手册

HMC327MS8GETR 替代型号

与HMC327MS8GETR相关器件

与HMC327MS8GETR相关文章

您还可以找

您在本页遇到什么问题？