Datasheet > HMC-ALH244-Die

HMC-ALH244-Die

更新时间： 2023-12-20 18:45:11

品牌	Logo	应用领域
亚德诺 - ADI		放大器
页数	文件大小	规格书
6页	270K
描述
低噪声放大器芯片，24 - 40 GHz

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HMC-ALH244-Die 数据手册

HMC-ALH244

v02.0209

GaAs HEMT MMIC LOW NOISE

AMPLIFIER, 24 - 40 GHz

Typical Applications

This HMC-ALH244 is ideal for:

Features

Noise Figure: 3.5 dB

• Point-to-Point Radios

• Point-to-Multi-Point Radios

• VSAT

Gain: 12 dB

P1dB Output Power: +13 dBm

Supply Voltage: +4V @ 45 mA

Die Size: 2.50 x 1.4 x 0.1 mm

• SATCOM

General Description

Functional Diagram

The HMC-ALH244 is a two stage GaAs MMIC HEMT

Low Noise Ampliﬁer die which operates between

24 and 40 GHz. The ampliﬁer provides 12 dB of gain,

a noise ﬁgure of 3.5 dB, and requires only 45 mA

from a +4V supply voltage. The HMC-ALH244 ampliﬁer

die is ideal for integration into Multi-Chip-Modules

(MCMs) due to its small size (3.5 mmꢀ).

Electrical Speciﬁcations^[1], T_A= +25° C, Vdd= 4V, Idd = 45mA^[2]

Parameter

Min.

Typ.

24 - 40

Max.

Units

GHz

Frequency Range

Gain

Noise Figure

3.5

Input Return Loss

Output Return Loss

Output Power for 1 dB Compression

dBm

Supply Current (Idd)

100

[1] Unless otherwise indicated, all measurements are from probed die

[2] Adjust Vgg between -1V to +0.3V (-0.2V Typ.) to achieve Idd_total= 45 mA

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

For price, delivery, and to place orders: Analog Devices, Inc.,

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106

rights of third parties that may result from its use. Specifications subject to change without notice. No

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license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

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