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HM6AQB18202BP40 PDF预览

HM6AQB18202BP40

更新时间: 2024-12-01 19:04:39
品牌 Logo 应用领域
瑞萨 - RENESAS 静态存储器内存集成电路
页数 文件大小 规格书
24页 261K
描述
2MX18 QDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165

HM6AQB18202BP40 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Contact Manufacturer零件包装代码:BGA
包装说明:15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165针数:165
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.8
最长访问时间:0.45 nsJESD-30 代码:R-PBGA-B165
JESD-609代码:e1长度:17 mm
内存密度:37748736 bit内存集成电路类型:QDR SRAM
内存宽度:18湿度敏感等级:3
功能数量:1端子数量:165
字数:2097152 words字数代码:2000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:2MX18
封装主体材料:PLASTIC/EPOXY封装代码:LBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.46 mm
最大供电电压 (Vsup):1.9 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:TIN SILVER COPPER端子形式:BALL
端子节距:1 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:20宽度:15 mm
Base Number Matches:1

HM6AQB18202BP40 数据手册

 浏览型号HM6AQB18202BP40的Datasheet PDF文件第2页浏览型号HM6AQB18202BP40的Datasheet PDF文件第3页浏览型号HM6AQB18202BP40的Datasheet PDF文件第4页浏览型号HM6AQB18202BP40的Datasheet PDF文件第5页浏览型号HM6AQB18202BP40的Datasheet PDF文件第6页浏览型号HM6AQB18202BP40的Datasheet PDF文件第7页 
HM66AQB36102/HM66AQB18202  
HM66AQB9402  
36-Mbit QDRTMII SRAM  
2-word Burst  
REJ03C0049-0100  
Rev.1.00  
Jul.26.2006  
Description  
The HM66AQB36102 is a 1,048,576-word by 36-bit, the HM66AQB18202 is a 2,097,152-word by 18-bit, and the  
HM66AQB9402 is a 4,194,304-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS  
technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a  
burst counter. All input registers controlled by an input clock pair (K and K) and are latched on the positive edge of K  
and K. These products are suitable for applications which require synchronous operation, high speed, low voltage, high  
density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.  
Features  
1.8 V ± 0.1 V power supply for core (VDD  
1.4 V to VDD power supply for I/O (VDDQ  
DLL circuitry for wide output data valid window and future frequency scaling  
Separate independent read and write data ports with concurrent transactions  
100% bus utilization DDR read and write operation  
Two-tick burst for low DDR transaction size  
Two input clocks (K and K) for precise DDR timing at clock rising edges only  
Two output clocks (C and C) for precise flight time and clock skew matching-clock and data delivered together to  
receiving device  
)
)
Internally self-timed write control  
Clock-stop capability with µs restart  
User programmable impedance output  
Fast clock cycle time: 4.0 ns (250 MHz)/5.0 ns (200 MHz)/6.0 ns (167 MHz)  
Simple control logic for easy depth expansion  
JTAG boundary scan  
Part No. Information  
Organi-  
zation  
Cycle  
time  
Clock  
frequency  
Catalogue Part No.  
Ordering Part No.  
Package  
HM66AQB36102BP-40  
HM66AQB36102BP-50  
HM66AQB36102BP-60  
HM6AQB36102BP40  
HM6AQB36102BPL50  
HM6AQB36102BPL60  
1-M word  
× 36-bit  
4.0 ns  
5.0 ns  
6.0 ns  
250 MHz Plastic FBGA  
200 MHz 165-pin  
167 MHz PLBG0165FB-A  
(BP-165A)  
HM66AQB18202BP-40  
HM66AQB18202BP-50  
HM66AQB18202BP-60  
HM6AQB18202BP40  
HM6AQB18202BPL50  
HM6AQB18202BPL60  
2-M word  
× 18-bit  
4.0 ns  
5.0 ns  
6.0 ns  
250 MHz  
200 MHz  
167 MHz  
HM66AQB9402BP-40  
HM66AQB9402BP-50  
HM66AQB9402BP-60  
HM6AQB9402BP40  
HM6AQB9402BPL50  
HM6AQB9402BPL60  
4-M word  
× 9-bit  
4.0 ns  
5.0 ns  
6.0 ns  
250 MHz  
200 MHz  
167 MHz  
Note: QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress  
Semiconductor, IDT, NEC, Samsung, and Renesas Technology Corp.  
Rev.1.00 Jul 26, 2006 page 1 of 20  

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2MX18 QDR SRAM, 0.5ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AQB36102BP40 RENESAS

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1MX36 QDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AQB36102BPL50 RENESAS

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1MX36 QDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AQB36102BPL60 RENESAS

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1MX36 QDR SRAM, 0.5ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165