Datasheet > HM6AQB18202BPL50

HM6AQB18202BPL50

更新时间： 2024-12-02 08:01:51

品牌	Logo	应用领域
瑞萨 - RENESAS		静态存储器
页数	文件大小	规格书
24页	261K
描述
2MX18 QDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165

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HM6AQB18202BPL50 数据手册

HM66AQB36102/HM66AQB18202

HM66AQB9402

36-Mbit QDR^TMII SRAM

2-word Burst

REJ03C0049-0100

Rev.1.00

Jul.26.2006

Description

The HM66AQB36102 is a 1,048,576-word by 36-bit, the HM66AQB18202 is a 2,097,152-word by 18-bit, and the

HM66AQB9402 is a 4,194,304-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS

technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a

burst counter. All input registers controlled by an input clock pair (K and K) and are latched on the positive edge of K

and K. These products are suitable for applications which require synchronous operation, high speed, low voltage, high

density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.

Features

•

1.8 V ± 0.1 V power supply for core (V_DD

1.4 V to V_DDpower supply for I/O (V_DDQ

DLL circuitry for wide output data valid window and future frequency scaling

Separate independent read and write data ports with concurrent transactions

100% bus utilization DDR read and write operation

Two-tick burst for low DDR transaction size

Two input clocks (K and K) for precise DDR timing at clock rising edges only

Two output clocks (C and C) for precise flight time and clock skew matching-clock and data delivered together to

receiving device

)

•

Internally self-timed write control

Clock-stop capability with µs restart

User programmable impedance output

Fast clock cycle time: 4.0 ns (250 MHz)/5.0 ns (200 MHz)/6.0 ns (167 MHz)

Simple control logic for easy depth expansion

JTAG boundary scan

Part No. Information

Organi-

zation

Cycle

time

Clock

frequency

Catalogue Part No.

Ordering Part No.

Package

HM66AQB36102BP-40

HM66AQB36102BP-50

HM66AQB36102BP-60

HM6AQB36102BP40

HM6AQB36102BPL50

HM6AQB36102BPL60

1-M word

× 36-bit

4.0 ns

5.0 ns

6.0 ns

250 MHz Plastic FBGA

200 MHz 165-pin

167 MHz PLBG0165FB-A

(BP-165A)

HM66AQB18202BP-40

HM66AQB18202BP-50

HM66AQB18202BP-60

HM6AQB18202BP40

HM6AQB18202BPL50

HM6AQB18202BPL60

2-M word

× 18-bit

4.0 ns

5.0 ns

6.0 ns

250 MHz

200 MHz

167 MHz

HM66AQB9402BP-40

HM66AQB9402BP-50

HM66AQB9402BP-60

HM6AQB9402BP40

HM6AQB9402BPL50

HM6AQB9402BPL60

4-M word

× 9-bit

4.0 ns

5.0 ns

6.0 ns

250 MHz

200 MHz

167 MHz

Note: QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress

Semiconductor, IDT, NEC, Samsung, and Renesas Technology Corp.

Rev.1.00 Jul 26, 2006 page 1 of 20

12 3 4 5 6 7...24

中文翻译

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与HM6AQB18202BPL50相关器件

型号	品牌	获取价格	描述	数据表
HM6AQB18202BPL60	RENESAS	获取价格	2MX18 QDR SRAM, 0.5ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AQB18204BP30	RENESAS	获取价格	2MX18 QDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AQB18204BP33	RENESAS	获取价格	2MX18 QDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AQB18204BP40	RENESAS	获取价格	2MX18 QDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AQB18204BPL50	RENESAS	获取价格	2MX18 QDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AQB18204BPL60	RENESAS	获取价格	2MX18 QDR SRAM, 0.5ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AQB36102BP40	RENESAS	获取价格	1MX36 QDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AQB36102BPL50	RENESAS	获取价格	1MX36 QDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AQB36102BPL60	RENESAS	获取价格	1MX36 QDR SRAM, 0.5ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AQB36104BP30	RENESAS	获取价格	1MX36 QDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165

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