Datasheet > HM6AQB36104BPL60

HM6AQB36104BPL60

更新时间： 2024-12-01 15:34:11

品牌	Logo	应用领域
瑞萨 - RENESAS		静态存储器
页数	文件大小	规格书
26页	275K
描述
1MX36 QDR SRAM, 0.5ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165

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HM6AQB36104BPL60 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Contact Manufacturer	零件包装代码：	BGA
包装说明：	15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165	针数：	165
Reach Compliance Code：	unknown	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.87
Base Number Matches：	1

HM6AQB36104BPL60 数据手册

HM66AQB36104/HM66AQB18204

HM66AQB9404

36-Mbit QDR^TMII SRAM

4-word Burst

REJ03C0048-0100

Rev.1.00

Aug.23.2006

Description

The HM66AQB36104 is a 1,048,576-word by 36-bit, the HM66AQB18204 is a 2,097,152-word by 18-bit, and the

HM66AQB9404 is a 4,194,304-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS

technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a

burst counter. All input registers controlled by an input clock pair (K and K) and are latched on the positive edge of K

and K. These products are suitable for applications which require synchronous operation, high speed, low voltage, high

density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.

Features

•

1.8 V ± 0.1 V power supply for core (V_DD

1.4 V to V_DDpower supply for I/O (V_DDQ

DLL circuitry for wide output data valid window and future frequency scaling

Separate independent read and write data ports with concurrent transactions

100% bus utilization DDR read and write operation

)

Four-tick burst for reduced address frequency

Two input clocks (K and K) for precise DDR timing at clock rising edges only

Two output clocks (C and C) for precise flight time and clock skew matching-clock and data delivered together to

receiving device

•

Internally self-timed write control

Clock-stop capability with µs restart

User programmable impedance output

Fast clock cycle time: 3.0 ns (333 MHz)/3.3 ns (300 MHz)/4.0 ns (250 MHz)/5.0 ns (200 MHz)/6.0 ns (167 MHz)

Simple control logic for easy depth expansion

JTAG boundary scan

Note: QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress

Semiconductor, IDT, NEC, Samsung, and Renesas Technology Corp.

Rev.1.00 Aug 23, 2006 page 1 of 20

12 3 4 5 6 7...26

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与HM6AQB36104BPL60相关器件

型号	品牌	获取价格	描述	数据表
HM6AQB9402BP40	RENESAS	获取价格	4MX9 QDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AQB9402BPL50	RENESAS	获取价格	4MX9 QDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AQB9402BPL60	RENESAS	获取价格	4MX9 QDR SRAM, 0.5ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AQB9404BP30	RENESAS	获取价格	4MX9 QDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AQB9404BP33	RENESAS	获取价格	4MX9 QDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AQB9404BPL60	RENESAS	获取价格	4MX9 QDR SRAM, 0.5ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6C5332	HYNIX	获取价格	HM6C5332 - 1.2GHz/250MHz Dual Frequency Synthesizer
HM6C5332(24LGA)	HYNIX	获取价格	PLL/Frequency Synthesis Circuit, CMOS, PQCC24
HM6C5332TS	HYNIX	获取价格	PLL Frequency Synthesizer, CMOS, PDSO20, TSSOP-20
HM6F5201	HYNIX	获取价格	Dual Fractional-N / Integer-N Frequency Synthesizer

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