Datasheet > HM6AEB36104BPL60

HM6AEB36104BPL60

更新时间： 2024-12-02 06:23:31

品牌	Logo	应用领域
瑞萨 - RENESAS		双倍数据速率静态存储器
页数	文件大小	规格书
24页	266K
描述
1MX36 DDR SRAM, 0.5ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165

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HM6AEB36104BPL60 数据手册

HM66AEB36104/HM66AEB18204

HM66AEB9404

36-Mbit DDR II SRAM

4-word Burst

REJ03C0045-0100

Rev.1.00

Sep.06.2006

Description

The HM66AEB36104 is a 1,048,576-word by 36-bit, the HM66AEB18204 is a 2,097,152-word by 18-bit, and the

HM66AEB9404 is a 4,194,304-word by 9-bit synchronous double data rate static RAM fabricated with advanced

CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry

and a burst counter. All input registers controlled by an input clock pair (K and K) and are latched on the positive edge

of K and K. These products are suitable for applications which require synchronous operation, high speed, low voltage,

high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.

Features

•

1.8 V ± 0.1 V power supply for core (V_DD

1.4 V to V_DDpower supply for I/O (V_DDQ

DLL circuitry for wide output data valid window and future frequency scaling

Pipelined double data rate operation

Common data input/output bus

Four-tick burst for reduced address frequency

Two input clocks (K and K) for precise DDR timing at clock rising edges only

Two output clocks (C and C) for precise flight time and clock skew matching-clock and data delivered together to

receiving device

)

•

Internally self-timed write control

Clock-stop capability with µs restart

User programmable impedance output

Fast clock cycle time: 3.0 ns (333 MHz)/3.3 ns (300 MHz)/4.0 ns (250 MHz)/5.0 ns (200 MHz)/6.0 ns (167 MHz)

Simple control logic for easy depth expansion

JTAG boundary scan

Rev.1.00 Sep 06, 2006 page 1 of 20

12 3 4 5 6 7...24

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型号	品牌	获取价格	描述	数据表
HM6AEB36105BP30	RENESAS	获取价格	1MX36 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AEB36105BP33	RENESAS	获取价格	1MX36 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AEB36105BPL50	RENESAS	获取价格	1MX36 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AEB9402BP30	RENESAS	获取价格	4MX9 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AEB9402BP33	RENESAS	获取价格	4MX9 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AEB9402BP40	RENESAS	获取价格	4MX9 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AEB9402BPL60	RENESAS	获取价格	4MX9 DDR SRAM, 0.5ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AEB9404BP30	RENESAS	获取价格	4MX9 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AEB9404BPL50	RENESAS	获取价格	4MX9 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AEB9404BPL60	RENESAS	获取价格	4MX9 DDR SRAM, 0.5ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165