Datasheet > HM6AEB18202BP30

HM6AEB18202BP30

更新时间： 2024-12-02 03:25:19

品牌	Logo	应用领域
瑞萨 - RENESAS		双倍数据速率静态存储器
页数	文件大小	规格书
24页	260K
描述
2MX18 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

HM6AEB18202BP30 数据手册

HM66AEB36102/HM66AEB18202

HM66AEB9402

36-Mbit DDR II SRAM

2-word Burst

REJ03C0046-0100

Rev.1.00

Aug.28.2006

Description

The HM66AEB36102 is a 1,048,576-word by 36-bit, the HM66AEB18202 is a 2,097,152-word by 18-bit, and the

HM66AEB9402 is a 4,194,304-word by 9-bit synchronous double data rate static RAM fabricated with advanced

CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry

and a burst counter. All input registers controlled by an input clock pair (K and K) and are latched on the positive edge

of K and K. These products are suitable for applications which require synchronous operation, high speed, low voltage,

high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.

Features

•

1.8 V ± 0.1 V power supply for core (V_DD

1.4 V to V_DDpower supply for I/O (V_DDQ

DLL circuitry for wide output data valid window and future frequency scaling

Pipelined double data rate operation

Common data input/output bus

Two-tick burst for low DDR transaction size

Two input clocks (K and K) for precise DDR timing at clock rising edges only

Two output clocks (C and C) for precise flight time and clock skew matching-clock and data delivered together to

receiving device

)

•

Internally self-timed write control

Clock-stop capability with µs restart

User programmable impedance output

Fast clock cycle time: 3.0 ns (333 MHz)/3.3 ns (300 MHz)/4.0 ns (250 MHz)/5.0 ns (200 MHz)/6.0 ns (167 MHz)

Simple control logic for easy depth expansion

JTAG boundary scan

Rev.1.00 Aug 28, 2006 page 1 of 20

12 3 4 5 6 7...24

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
HM6AEB18202BP33	RENESAS	获取价格	2MX18 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AEB18202BP40	RENESAS	获取价格	2MX18 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AEB18202BPL50	RENESAS	获取价格	2MX18 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AEB18202BPL60	RENESAS	获取价格	2MX18 DDR SRAM, 0.5ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AEB18204BP30	RENESAS	获取价格	2MX18 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AEB18204BP33	RENESAS	获取价格	2MX18 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AEB18204BP40	RENESAS	获取价格	2MX18 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AEB18205BP30	RENESAS	获取价格	2MX18 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AEB18205BP40	RENESAS	获取价格	2MX18 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165
HM6AEB18205BPL50	RENESAS	获取价格	2MX18 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165