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HM51W18165TT-7 PDF预览

HM51W18165TT-7

更新时间: 2024-10-25 22:18:55
品牌 Logo 应用领域
日立 - HITACHI 存储内存集成电路光电二极管动态存储器
页数 文件大小 规格书
36页 453K
描述
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh

HM51W18165TT-7 数据手册

 浏览型号HM51W18165TT-7的Datasheet PDF文件第2页浏览型号HM51W18165TT-7的Datasheet PDF文件第3页浏览型号HM51W18165TT-7的Datasheet PDF文件第4页浏览型号HM51W18165TT-7的Datasheet PDF文件第5页浏览型号HM51W18165TT-7的Datasheet PDF文件第6页浏览型号HM51W18165TT-7的Datasheet PDF文件第7页 
HM51W16165 Series  
HM51W18165 Series  
16 M EDO DRAM (1-Mword × 16-bit)  
4 k Refresh/1 k Refresh  
ADE-203-650D (Z)  
Rev. 4.0  
Nov. 1997  
Description  
The Hitachi HM51W16165 Series, HM51W18165 Series are CMOS dynamic RAMs organized as  
1,048,576-word × 16-bit. They employ the most advanced CMOS technology for high performance and  
low power. HM51W16165 Series, HM51W18165 Series offer Extended Data Out (EDO) Page Mode as a  
high speed access mode. They have package variations of standard 400-mil 42-pin plastic SOJ and 400-mil  
50-pin plastic TSOP.  
Features  
Single 3.3 V (±0.3 V)  
Access time: 50 ns/60 ns/70 ns (max)  
Power dissipation  
Active mode : 396 mW/360mW/324 mW (max) (HM51W16165 Series)  
: 684 mW /612 mW /540 mW (max) (HM51W18165 Series)  
Standby mode : 7.2 mW (max)  
: 0.54 mW (max) (L-version)  
EDO page mode capability  
Refresh cycles  
4096 refresh cycles : 64 ms (HM51W16165 Series)  
: 128 ms (L-version)  
1024 refresh cycles : 16 ms (HM51W18165 Series)  
: 128 ms (L-version)  
4 variations of refresh  
RAS-only refresh  
CAS-before-RAS refresh  
Hidden refresh  
Self refresh (L-version)  
2CAS-byte control  
Battery backup operation (L-version)  
This Material Copyrighted By Its Respective Manufacturer  

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