Datasheet > HM51W4265CLTT-6

HM51W4265CLTT-6

更新时间： 2024-10-25 23:56:15

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
32页	386K
描述
x16 EDO Page Mode DRAM

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数据手册

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HM51W4265CLTT-6 数据手册

HM51W4265C Series

262,144-word × 16-bit Dynamic Random Access Memory

ADE-203-477B (Z)

Rev. 2.0

Jul. 10, 1997

Description

The Hitachi HM51W4265C Series is a CMOS dynamic RAM organized as 262,144-word × 16-bit.

HM51W4265C Series has realized higher density, higher performance and various functions by employing

0.8 µm CMOS process technology and some new CMOS circuit design technologies. The HM51W4265C

Series offers Extended Data Out (EDO) Page Mode as a high speed access mode. It is packaged in standard

44-pin plastic TSOPII.

Features

•

Single 3.3 V supply: 3.3 V ±0.15 V (HM51W4265C-6R)

3.3 V ±0.3 V (HM51W4265C-6R)

Access time: 60 ns/70 ns/80 ns (max)

Power dissipation

Active mode: 576 mW/552 mW/468 mW/396 mW (max)

Standby mode: 6.9 mW (max) (HM51W4265C-6R)

7.2 mW (max) (HM51W4265C-6/7/8)

0.69 mW (max)(L-version) (HM51W4265CL-6R)

0.72 mW (max) (L-version) (HM51W4265CL-6/7/8)

EDO page mode capability

•

Refresh cycles

512 refresh cycles: 8 ms

128 ms (L-version)

•

3 variations of refresh

RAS-only refresh

CAS-before-RAS refresh

Self refresh

•

2CAS-byte control

Battery backup operation (L-version)

12 3 4 5 6 7...32

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与HM51W4265CLTT-6相关器件

型号	品牌	获取价格	描述	数据表
HM51W4265CLTT-6R	ETC	获取价格	x16 EDO Page Mode DRAM
HM51W4265CLTT-7	ETC	获取价格	x16 EDO Page Mode DRAM
HM51W4265CLTT-8	ETC	获取价格	x16 EDO Page Mode DRAM
HM51W4265CTT-6	ETC	获取价格	x16 EDO Page Mode DRAM
HM51W4265CTT-6R	ETC	获取价格	x16 EDO Page Mode DRAM
HM51W4265CTT-7	ETC	获取价格	x16 EDO Page Mode DRAM
HM51W4265CTT-8	ETC	获取价格	x16 EDO Page Mode DRAM
HM51W4400BLRR-6	ETC	获取价格	x4 Fast Page Mode DRAM
HM51W4400BLRR-7	HITACHI	获取价格	Fast Page DRAM, 1MX4, 70ns, CMOS, PDSO20, PLASTIC, REVERSE, TSOP2-20
HM51W4400BLRR-8	ETC	获取价格	x4 Fast Page Mode DRAM